Heterogeneous gate tunneling transistor and forming method thereof
A technology of tunneling transistor and hetero-gate, which is applied in the field of semiconductor device design and manufacture, can solve the problems of TFET device performance to be improved, off-state current rise, and specific gravity.
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[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0023] The following disclosure provides different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a r...
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