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Method for forming graphene oxide pattern and graphene pattern

A graphene oxide, graphene technology, applied in printing, printing devices and other directions, can solve the problems of harsh conditions and high cost of patterning methods, and achieve the effects of fine patterns, low cost and simple operation process

Inactive Publication Date: 2012-09-05
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the application of devices, patterning materials is an important step. The existing laser direct writing method (Microstructuring of Graphene Oxide Nanosheets Using Direct Laser Writing. Yong Zhou, Qiaoliang Bao, Binni Varghese, Lena Ai Ling Tang, Chow Khim Tan, Chorng-Haur Sow, and Kian Ping Loh.Advanced Materials.2010, 22(1), 67-71), plasma etching (Patterned Graphene Electrodes from Solution-Processed Graphite Oxide Films for Organic Field-Effect Transistors .Shuping Pang, Hoi Nok Tsao, Xinliang Feng, and Klaus Mullen.Advanced Materials.2009, 21(34), 3488-3491) and other graphene patterning methods have high cost and harsh conditions

Method used

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  • Method for forming graphene oxide pattern and graphene pattern
  • Method for forming graphene oxide pattern and graphene pattern
  • Method for forming graphene oxide pattern and graphene pattern

Examples

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Effect test

preparation example Construction

[0040] The preparation method of the reduced graphene pattern of the present invention comprises: heating the graphene oxide pattern at 800-1000° C. for 15-60 minutes in a reducing atmosphere, wherein the graphene oxide pattern is described in the present invention The graphene oxide pattern prepared by the preparation method.

[0041] The present invention has no special requirements on the reducing atmosphere, for example, by total volume, it can be 3-10% H 2 Mixed gas with 90-97% inert gas. The inert gas may be various inert gases, and there is no special requirement in the present invention, so details will not be repeated here.

Embodiment 1

[0045] (1) Immerse the glass sheet (20mm × 20mm) in the mixed solution of ammonia water (25% by weight): hydrogen peroxide (30% by weight): deionized water = 1:1:5 (volume ratio), soak for 1 hour at 85°C , then washed with deionized water and stored in deionized water;

[0046] (2) Take out the glass sheet processed by step (1), rinse with deionized water and absolute ethanol, and blow dry with nitrogen;

[0047] (3) Take 250 μL of 0.01 mg / mL ethanol solution of graphene oxide (for the preparation method, refer to the literature: Hirata, M.; Gotou, T.; Horiuchi, S.; Fujiwara, M.; Ohba, M. Thin-film Particles of Graphite Oxide 1: High-yield Synthesis and Flexibility of the Particles.Carbon 2004, 42(14), 2929-2937, the organic solutions of other graphene oxides are also prepared by referring to this method) dropwise on the surface with multiple The surface of a polydimethylsiloxane (PDMS) stamp with a circular pattern (see Table 1 for parameters) (the size of the stamp surface ...

Embodiment 2

[0050] Same as the method of Example 1, except that the concentration of the ethanol solution of graphene oxide is 0.001mg / mL, the graphene oxide pattern with the same pattern shape as in Example 1 is obtained, but the uniformity is not as obtained in Example 1 Graphene oxide pattern is good.

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Abstract

The invention provides a method for forming a graphene oxide pattern and a graphene pattern thereof. The method is performed in one of the two ways (A) and (B): (A) enabling contact between a graphene oxide solution and a patterning polydimethoxy silane stamp for 1-500 minutes, and drying; enabling contact between the dried patterning polydimethoxy silane stamp and a substrate under external force of 0-5N; and removing the stamp to form a graphene oxide pattern on the substrate; and (B) enabling contact between a patterning polydimethoxy silane stamp and a binding agent and then a substrate under external force of 0-5N; removing the stamp to obtain the substrate after contact; enabling contact between the substrate after contact and a graphene oxide solution; and drying to form a graphene oxide pattern on the substrate. The method provided by the invention has low cost and a simple operation process, and creates a new method for forming a graphene oxide pattern.

Description

technical field [0001] The invention relates to a method for forming a graphene oxide pattern and a method for reducing the graphene oxide pattern obtained by the method for forming a graphene oxide pattern to form a graphene pattern. Background technique [0002] Since Geim et al. obtained single-layer graphene by micromechanical exfoliation in 2004, this thinnest known carbon material has become a "star molecule" in its family. Its stable two-dimensional lattice structure, super strong mechanical properties, excellent electrical conductivity and loading capacity have attracted extensive attention and research from the scientific community, and are considered to have a wide range of applications in the fields of micro-nano electronic devices, energy storage, and high-strength materials. Especially in the field of micro-nano electronic devices, it is expected to become a new generation of core materials. [0003] In order to transform application prospects into practical re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B41M1/12
Inventor 韩宝航王涛吴冲周鼎承倩怡孙树清
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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