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Simplified copper-copper bonding

一种键结、铜层的技术，应用在微结构技术、微观结构装置、气态化学镀覆等方向，能够解决伤害等问题，达到正确校准的效果

Active Publication Date: 2012-09-05
FRENCH ATOMIC & ALTERNATIVE ENERGIES COMMISSION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Applying pressure may harm MEMS sensors

Method used

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  • Simplified copper-copper bonding
  • Simplified copper-copper bonding
  • Simplified copper-copper bonding

Examples

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Embodiment Construction

[0048] The method according to the invention consists in achieving a molecular bond between the copper elements.

[0049] These elements can be copper plates, copper layers or connection pads, one surface of which is flush with the substrate which is an insulating material. Or further, one element thereof can be a copper plate and other elements of a set of pads, one surface of which is flush with the insulating substrate.

[0050] Molecular bonding is understood as the attachment of molecules in the middle of two flat surfaces adhered to each other without the use of any adhesive.

[0051] exist Figure 1A In , you can see a schematic diagram of one of the two elements 2 and 4 to be bonded. In the illustrated embodiment, all elements are symmetrical, as in the Figure 1E seen; only one will be described in detail. The element 2 comprises a substrate 6 , for example in silicon, covered with a layer of dielectric material 8 , for example in silicon dioxide, and a copper pad...

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Abstract

A method for bonding a first copper element onto a second copper element including a step for forming a crystalline copper layer enriched in oxygen on each of the surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, said step comprising: (a) at least one step for polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, (b) at least one step for cleaning said surfaces in order to suppress the presence of particles due to the polishing and the major portion of corrosion inhibitors, (c) at least one step for putting both crystalline copper layer enriched in oxygen in contact with each other.

Description

technical field [0001] The present invention relates to metal-metal bonding, and more particularly to simplified copper-copper bonding, which may find particular use in the fabrication of microelectronic devices. Background technique [0002] Three-dimensional integration in microelectronic devices allows for a reduction in the size of the device, a reduction in its power consumption, an increase in transmission rate, performance, and frequency of operation, among others. [0003] Three-dimensional integration specifically includes bonding steps through stack alignment, thinning and vertical interconnection. [0004] Through Silicon Via (TSV) technology is used, which consists of making connection holes through the silicon crystal. However, direct metal-to-metal bonding is preferred for high interconnect density and simplified technology. [0005] Copper is one of the metals that are specially made to make connection pads. [0006] There are different methods to achieve c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00269B81C1/00301B81C2203/0109B81C2203/019B81C2203/038H01L24/03H01L24/05H01L24/08H01L24/80H01L2224/80895H01L2224/08148H01L2224/80357H01L2224/80896H01L2924/1461H01L2224/05547H01L2224/80986H01L2924/00B32B15/01B81C1/00C23C10/28H01L21/02
Inventor 李·迪乔吉欧皮艾瑞克·葛广莫瑞斯·利佛依
Owner FRENCH ATOMIC & ALTERNATIVE ENERGIES COMMISSION