High-speed detection method and device for terahertz

A detection device and terahertz technology, which is applied in photometry and measurement circuits using electric radiation detectors, can solve the problems of no solution, inability to meet the working bias voltage of THz semiconductor quantum well detectors, limited bandwidth, etc.

Active Publication Date: 2012-09-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional methods or chips either provide very limited bandwidth in the range of tens of kHz, or cannot meet the working bias voltage of THz semiconductor quantum well detectors. Therefore, there is currently no effective solution for the miniaturization and high-speed detection circuit of THz QWP. s solution

Method used

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  • High-speed detection method and device for terahertz
  • High-speed detection method and device for terahertz

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Embodiment 1

[0024] This embodiment provides a high-speed detection device for terahertz waves, such as figure 1 As shown, the high-speed detection device for terahertz waves at least includes a terahertz quantum well detector and a transimpedance amplifier circuit; the terahertz quantum well detector is used for direct intensity detection of terahertz waves; the transimpedance amplifier circuit is used for The bias voltage is provided for the terahertz quantum well detector, and the photocurrent signal generated by the terahertz quantum well detector is converted into a voltage signal. The structures of the terahertz quantum well detector and the transimpedance amplifier circuit will be described in detail below.

[0025] 【THz Quantum Well Detector】

[0026] The terahertz quantum well detector is an extension of the mid-infrared quantum well detector (Quantum Well Infrared Photodetector) in the terahertz frequency band. It is an all-solid-state narrow-band detector with good spectral ana...

Embodiment 2

[0038] This embodiment provides a high-speed detection method for terahertz waves, such as image 3 shown, including the following steps:

[0039] S1, the terahertz quantum well detector directly detects the intensity of the terahertz wave, and outputs a photocurrent signal;

[0040] S2, the transimpedance amplifier circuit converts the photocurrent signal into a voltage signal for output;

[0041] S3, performing subsequent processing on the voltage signal.

[0042] refer to figure 1 , figure 2 The high-speed detection method for terahertz waves described in this embodiment can be realized by the high-speed detection device for terahertz waves described in Embodiment 1. The specific implementation of the method is as follows:

[0043] (1) The operating temperature of the THz QWP device is relatively low, and the THz QWP needs to be placed on the cold head of the mechanical refrigerator, and the cooling temperature is about 4K. According to the difference of THz QWP, the ...

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Abstract

The invention provides a high-speed detection method and device for terahertz. The high-speed detection device comprises a THzQWP (THz Quantum Well Photodetector) for directly carrying out strength detection on the terahertz and a trans-impedance amplifying circuit for supplying a bias voltage to the THzQWP and converting light current generated by the THzQWP into voltage signals. For conveniently designing the parameters of the trans-impedance amplifying circuit, the invention provides a small-signal lumped electrical model of the THzQWP. The small-signal lumped electrical model is formed by connecting a capacitor Cq with a bypass differential resistor Rd and a light current source Is in parallel. The trans-impedance amplifying circuit comprises an operational amplifier, a compensation capacitor CF and a trans-resistor RF; the inverse-phase input end of the operational amplifier is connected with one end of the THzQWP; the non-inverting input end of the operational amplifier is connected with the bias voltage; the trans-resistor RF is connected with the output end and the inverse-phase input end of the operational amplifier; the compensation capacitor is connected in parallel with the trans-resistor; and the other end of the THzQWP is connected with the ground. The high-speed detection device provided by the invention can supply the very low working bias voltage for the THzQWP, and converts the light current signals of the THzQWP to the voltage signals simultaneously, so that the follow-up circuit link treatment is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and relates to a terahertz wave detection method and device, in particular to a terahertz wave high-speed detection method and device. Background technique [0002] Terahertz waves refer to electromagnetic waves with frequencies ranging from 100GHz to 10THz, and frequencies between millimeter waves and infrared light. Due to its own characteristics, terahertz waves have broad application prospects in high-speed communications, imaging, spectrum analysis, and remote sensing. For the direct detection of terahertz waves above 1 THz, traditional methods and devices include silicon bolometers, pyroelectric detectors and Golay cells (Gaolai) detectors. These methods are based on thermal response detection, and the response speed is not high. [0003] The all-solid-state THz semiconductor quantum well detector (THz Quantum Well Photodetector, THzQWP) developed in recent ye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01J1/46
Inventor 曹俊诚陈镇谭智勇冯伟韩英军
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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