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Method for densifying porous silicon carbide base

A silicon carbide and porous technology, which is applied in the field of densification of porous silicon carbide substrates, can solve the problems of complexity and many steps, and achieve the effect of improving purity and reducing harmful impurity elements.

Inactive Publication Date: 2012-09-19
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition, it is disclosed that after impregnating the silicon carbide fiber / silicon carbide composite material with molten polycarbosilane, followed by non-melting and then calcination, there is a method for densification (Patent Document 3), but there are many steps and complicated problems

Method used

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  • Method for densifying porous silicon carbide base
  • Method for densifying porous silicon carbide base
  • Method for densifying porous silicon carbide base

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0185] Material:

[0186] (A) 100 parts by mass of a diorganopolysiloxane having an alkenyl group in one molecule represented by the following formula,

[0187] [chemical 13]

[0188]

[0189] (where n and m are n / m=4 / 1, and the viscosity of the siloxane at 25° C. is 600 mPa.s), and,

[0190] (B) 0.5 parts by mass of benzoyl peroxide,

[0191] (C) 33 parts by mass of a diorganopolysiloxane having a hydrogen atom bonded to a silicon atom represented by the following formula,

[0192] [chemical 14]

[0193]

[0194] (D) 160 parts by mass of silicon carbide powder (average particle diameter: 2 μm)

[0195] (That is, an amount of 33% by volume of the entire silicone composition)

[0196] A porous silicon carbide substrate (20 mm long x 20 mm wide x 2 mm thick, 1.9 g, specific gravity: 2.38) with an average pore diameter of 5 μm was immersed in the composition to fully impregnate the substrate with the composition. The obtained silicone-impregnated porous silicon carbid...

Embodiment 2

[0206] Put the following formula:

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Abstract

Disclosed is a densified silicon carbide body which has excellent mechanical strength. The densified silicon carbide body is able to be obtained by a method for densifying a porous silicon carbide base, said method comprising a step in which a porous silicon carbide base is impregnated with a curable silicone composition that contains a silicon carbide powder, then the composition is cured therein, and then the cured product is thermally decomposed in a non-oxidizing atmosphere. Consequently, the porous silicon carbide base is able to be easily densified and modified.

Description

technical field [0001] The present invention relates to a method for densifying a silicon carbide substrate by filling pores of a porous silicon carbide substrate with silicon carbide using a silicone composition. Background technique [0002] Originally, since silicon carbide is difficult to sinter, it is difficult to obtain a dense sintered body under normal pressure, and it is generally porous (Non-Patent Document 1). Silicon carbide materials can be used for furnace materials, bearings, sliding materials, and the like. In such applications, if the silicon carbide material is porous, there is a problem of insufficient mechanical strength. Therefore, a silicon carbide material with a dense structure is required. [0003] Previously, methods for obtaining a dense silicon carbide sintered body are known: a method of using a sintering aid such as boron (Patent Document 1); a method of contacting molten silicon with a molded body mainly composed of silicon carbide and carbon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B41/85C04B41/87
CPCC04B2111/00353C04B2235/72C04B2235/616C04B2235/3826C04B2235/483C04B2235/656C04B41/009C04B35/565C04B41/87C04B41/5059C04B2111/00844Y10T428/249994C04B41/4517C04B41/4535C04B41/4554C04B38/00C04B41/85C07F7/18
Inventor 青木 良隆
Owner SHIN ETSU CHEM IND CO LTD
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