Unlock instant, AI-driven research and patent intelligence for your innovation.

Image sensor

An image sensor and storage node technology, applied in the field of image processing, can solve problems such as missing improvement, and achieve the effect of enhancing transmission capacity

Active Publication Date: 2012-09-26
BRIGATES MICROELECTRONICS KUNSHAN
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing CMOS image sensors mostly involve increased dynamic range under high-light conditions, but lack of improvement under low-light conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor
  • Image sensor
  • Image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description.

[0037] Such as figure 1 As shown, an image sensor is provided in Embodiment 1 of the present invention, including: a photoelectric conversion unit PD, a first storage node FD1, a second storage node FD2, a first readout MOS transistor TX1, a first switch MOS transistor SS1 and a switch Capacitor unit CAP;

[0038] The photoelectric conversion unit PD is adapted to convert received light signals into stored charges;

[0039] The first storage node FD1 is adapted to store the stored charge when connected to the photoelectric conversion unit PD;

[0040] The second storage node FD2 is adapted to store ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an image sensor which comprises a photoelectric conversion unit, a first storage node, a second storage node, a switched capacitor unit, a first read-out MOS (metal oxide semiconductor) tube and a first switching MOS tube. The photoelectric conversion unit is suitable for converting received optical signals into storage charge, and the first storage node, the second storage node and the switched capacitor unit are suitable for storing the storage charge when being connected to the photoelectric conversion unit. A grid electrode of the first read-out MOS tube receives a first read-out signal, a source electrode is connected with the photoelectric conversion unit, a drain electrode is connected with the first storage node, and the first read-out signal is a switch-on signal under the first illumination condition, the second illumination condition or the third illumination condition. A grid electrode of the first switching MOS tube receives a first switching signal, the source electrode is connected with the second storage node, the drain electrode is connected with the first storage node, and the first switching signal is a switch-on signal under the second illumination condition or the third illumination condition. The switched capacitor unit is suitable for receiving a second switching signal and is connected to the photoelectric conversion unit when the second switching signal is a switch-on signal, and the second switching signal is the switch-on signal under the third illumination condition.

Description

technical field [0001] The invention relates to image processing technology, in particular to an image sensor. Background technique [0002] The dynamic range is the ratio of the maximum signal amount (saturated signal amount) to the noise value. Saturation semaphore is often measured by the number of full well electrons. In the case of the same random noise, the more electrons in the full well of the image sensor, the larger the dynamic range of the image sensor. To increase the number of electrons in the full well of the image sensor, on the one hand, it is necessary to increase the number of photocharges generated by the exposure of the photosensitive diode, and on the other hand, it is necessary to enable the storage node to accommodate more electrons. Images with a wider dynamic range have more pronounced grayscale gradients from light to dark, and are less underexposed or overexposed. [0003] The light sensitivity of the CMOS image sensor is the benchmark for how d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04N5/355H04N5/3745H04N5/378
Inventor 万涛涛王林罗文哲
Owner BRIGATES MICROELECTRONICS KUNSHAN