Method of adjusting refractive index of silicon nitride
A refractive index, silicon nitride technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as shortening equipment life, reducing equipment utilization, increasing the frequency of regular maintenance, and improving utilization. and service life, easy maintenance, reducing the effect of frequent conversion
Inactive Publication Date: 2012-10-03
SHANGHAI HUALI MICROELECTRONICS CORP
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[0008] The present invention is aimed at the conventional adjustment of the refractive index of silicon nitride thin films, which usually requires depositing silicon nitride thin films with different refractive indices on the same equipment. When depositing silicon nitride thin films with different properties, it is often necessary to adjust the Carry out process conversion and testing, which greatly reduces the utilization rate of the equipment. At the same time, the high-frequency process conversion also increases the frequency of regular maintenance for the equipment itself, shortening the life of the equipment and other defects. Provide an adjustment nitrogen SiC Refractive Index Method
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[0025] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0026] see figure 1 , figure 1 Shown is a flow chart of the method for adjusting the refractive index of silicon nitride according to the present invention. The method for adjusting the refractive index of silicon nitride comprises the following steps:
[0027] Executing step S1: providing a substrate for supporting the silicon nitride film;
[0028] Executing step S2: preparing a reference silicon nitride film, depositing the reference silicon nitride film on the substrate, and the reference silicon nitride film has a uniform refractive index. The deposition methods include but not limited to PVD and CVD processes.
[0029] Executing step S3: irradiating the reference silicon nitride film with ultraviolet light to adjust the refract...
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Abstract
The invention relates to a method of adjusting the refractive index of silicon nitride, which comprises the following steps of: S1, providing a substrate used for supporting a reference silicon nitride film; S2, preparing the reference silicon nitride film, depositing the reference silicon nitride film with the uniform refractive index on the substrate; and S3, adjusting the refractive index via irradiating the reference silicon nitride film with ultraviolet light. By adopting the method of adjusting the refractive index of silicon nitride, the prepared reference silicon nitride film has a single nature and controllable refractive index. When the refractive index of the reference silicon nitride film is adjusted in the method provided by the invention for adjusting the refractive index of silicon nitride, the frequent switching of procedures of the device can be reduced, the maintenance can be facilitated, the rate of utilization of the device can be increased, and the service life of the device can be prolonged.
Description
technical field [0001] The invention relates to the technical field of optical characteristic adjustment of semiconductor devices, in particular to a method for adjusting the refractive index of silicon nitride. Background technique [0002] As an important fine ceramic thin film material, silicon nitride film is not only an excellent high-temperature structural material, but also a new type of functional material. The silicon nitride film has the characteristics of good impact resistance, oxidation resistance and high strength, and has been widely used in many aspects. Silicon nitride thin films are widely used in the field of microelectronics, micromechanical manufacturing, optoelectronics industry, Solar cells, ceramic cutting tools, surface modification of materials, aerospace and other fields. [0003] In semiconductor devices and integrated circuits, silicon nitride films can be used as passivation protection layers to block external water vapor and scratches from ha...
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Login to View More IPC IPC(8): H01L21/268H01L21/02
Inventor 徐强
Owner SHANGHAI HUALI MICROELECTRONICS CORP