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Light emitting diode device and producing method thereof

一种发光二极管、制造方法的技术，应用在电气元件、电固体器件、电路等方向，能够解决效率不均匀、白色发光装置发出不均白色光等问题，达到提高取出效率、实现亮度、防止发光效率降低的效果

Active Publication Date: 2012-10-03
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, there is a problem that the efficiency of wavelength conversion in the phosphor layer becomes uneven, and the white light emitting device emits uneven white light.

Method used

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  • Light emitting diode device and producing method thereof
  • Light emitting diode device and producing method thereof
  • Light emitting diode device and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0161] A base substrate with a thickness of 1 mm was prepared, which was made of sapphire (Al 2 o 3 ) formed by laminating a conductor layer on the upper surface of an insulating substrate composed of copper, nickel and gold (refer to figure 1 (a)).

[0162] In addition, a support substrate with a thickness of 450 μm made of sapphire was prepared (see image 3 ). Next, a buffer layer made of GaN with a thickness of 30 nm, and a buffer layer made of N-type GaN (n-GaN:Si, similarly shown below) obtained by doping Si were sequentially formed on the support substrate in the above-mentioned pattern by epitaxial growth. A 5 μm N-type semiconductor layer, a 120-nm-thick light-emitting layer made of InGaN, and a 50-nm-thick P-type semiconductor layer made of p-GaN:Mg (refer to image 3 ).

[0163] Next, an electrode portion is formed on the upper surface of the photo-semiconductor layer so as to be connected to the photo-semiconductor layer by a patterning method (refer to imag...

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PUM

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Abstract

A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer.

Description

technical field [0001] The present invention relates to a light emitting diode device and its manufacturing method, in detail, to a light emitting diode device manufacturing method and a light emitting diode device obtained by the light emitting diode device manufacturing method. Background technique [0002] In recent years, a white light-emitting device has been known as a light-emitting device capable of emitting high-energy light. The white light emitting device is provided with, for example: a base substrate; LEDs (Light Emitting Diodes) stacked on the base substrate to emit blue light; a phosphor layer capable of converting blue light into yellow light for covering the LEDs; and a sealing layer, It is used to seal LEDs. This white light-emitting device emits high-energy white light through color mixing of blue light and yellow light, wherein the blue light is emitted from an LED sealed by the sealing layer and transmitted from the base substrate to the phosphor layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/60
CPCH01L33/505H01L33/60H01L2224/16225H01L2933/005H01L33/46H01L24/17H01L33/405H01L2924/12041H01L2924/12042H01L2924/15787H01L2924/181H01L2924/00H01L33/50H01L33/52
Inventor 佐藤慧伊藤久贵大薮恭也新堀悠纪
Owner EPISTAR CORP