Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for forming silicon dioxide side wall with uniform thickness

A silicon dioxide, uniform thickness technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as differences in film thickness uniformity

Active Publication Date: 2015-03-18
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, in the case of the same increase in thickness, the film thickness uniformity of the two regions will have a huge difference

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming silicon dioxide side wall with uniform thickness
  • Method for forming silicon dioxide side wall with uniform thickness
  • Method for forming silicon dioxide side wall with uniform thickness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The invention provides a method for forming silicon dioxide sidewalls with uniform thickness. First, a layer of sidewall oxide layer is deposited on the surface of a plurality of gate devices; the formed sidewall oxide layer is etched, so that The seal at the gate is opened; a sidewall oxide layer is deposited on the previously formed sidewall oxide layer, and the formed sidewall oxide layer is etched again; the above deposition and etching process of the sidewall oxide layer are repeated , until the thickness of the formed sidewall oxide layer reaches the target thickness.

[0016] The method provided by the present invention will be further described in detail through the following examples, so as to better understand the content of the present invention, but the content of the examples does not limit the protection scope of the present invention.

[0017] In the present invention, a silicon dioxide layer 11 is deposited at a low temperature on the surface of the devi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for forming a silicon dioxide side wall with a uniform thickness, comprising the following steps: firstly, depositing a side wall oxide layer on the surfaces of a plurality of formed grid devices respectively; etching the formed side wall oxide layers to open seals formed between each two grids on the device in the deposition process; depositing a side wall oxide layer on each formed side wall oxide layer, and etching the formed side oxide layers again; and repeating the deposition and etching process of the side wall oxide layers till the thickness of the formed side wall oxide layers reaches the target thickness, wherein the etching is performed by an in-situ NF3 plus NH3 plasma.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for forming silicon dioxide sidewalls with uniform thickness on the device surface. Background technique [0002] Spacer is a necessary structure in the industry to manufacture semiconductor CMOS devices. It can not only protect the gate, but also reduce the short channel effect well with the shallow doping (LDD) process. [0003] So far, the traditional sidewall process mostly uses a composite layer of silicon dioxide and silicon nitride (silicon nitride is the outer layer). When it comes to the 65nm process and below, the requirements for the deposition of silicon dioxide films are getting more and more High, not only requires a low temperature deposition process (<300~600°C), but also requires good uniformity, especially for different areas (large line width, such as a single polycrystalline gate area and small line width, such as static memory ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316
Inventor 张文广陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP