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Multilayer conductive film with high work function, preparation method thereof and organic electroluminescent device

A high work function, conductive film technology, applied in the fields of electric solid device, semiconductor device, semiconductor/solid state device manufacturing, etc., can solve problems such as production limitations

Inactive Publication Date: 2012-10-10
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, numerous literature reports indicate that the resistivity of ZTO is relatively high (~10 -2 Ω cm), there is still a certain distance from the application requirements (the resistivity of ITO is ~10 -4 Ω·cm)
By doping Sb element, AZTO film can be prepared into AZTO film, which can greatly reduce the resistance, but this also requires strict control of the preparation process, which has great limitations in production.

Method used

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  • Multilayer conductive film with high work function, preparation method thereof and organic electroluminescent device
  • Multilayer conductive film with high work function, preparation method thereof and organic electroluminescent device
  • Multilayer conductive film with high work function, preparation method thereof and organic electroluminescent device

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preparation example Construction

[0020] The preparation method of the above-mentioned high work function multilayer conductive film, such as figure 2 shown, including the following steps:

[0021] S1, the preparation of the target: the ZnO, SnO 2 and Sb 2 o 5 After the raw materials are mixed and ground, they are sintered at 900-1300°C to form an AZTO target; among them, ZnO:SnO 2 52:48 (mass percentage), Sb 2 o 5 0.5-5% (mass percentage) of the total amount; preferably, Sb 2 o 5 The mass percentage is 0.5%, and the sintering temperature is 1200°C; the CuSn target is obtained by purchasing, and the purity is 99.999%; ZnO, SnO 2 and Sb 2 o 5 The purity is 99.999%;

[0022] S2, AZTO target material, CuSn target material and substrate (such as, polyethylene terephthalate (PET), polycarbonate (PC), polyethylene naphthalate (PEN) in step S1 ), polyethersulfone (PES), etc.) into the vacuum chamber of the magnetron sputtering coating equipment, and use a mechanical pump and a molecular pump to pump the v...

Embodiment 1

[0031] Choose ZnO and SnO with a purity of 99.99% 2 , Sb 2 o 5 powder (wherein, ZnO: SnO 2 =52:48 (mass percentage)), that is, 51.74wt% of ZnO, 47.76wt% of SnO 2 , 0.5wt% Sb 2 o 5 ), were uniformly mixed, and sintered at 1200°C to form an AZTO target of Φ50×2mm, and put the AZTO target and CuSn target into the vacuum chamber of the magnetron sputtering coating equipment. Then, the polyethylene terephthalate (PET) substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in the vacuum chamber of the magnetron sputtering coating equipment. Set the distance between the center line of the AZTO target and the CuSn target to the polyethylene terephthalate (PET) substrate as 50mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas with a working gas flow rate of 20sccm is introduced, the pressure is adjusted to 1.0Pa, and then the coating is started, and the...

Embodiment 2

[0034] Choose ZnO and SnO with a purity of 99.99% 2 , Sb 2 o 5 powder (wherein, ZnO: SnO 2 =52:48 (mass percentage)), that is, 49.96wt% of ZnO, 46.08wt% of SnO 2 , 4wt% Sb 2 o 5 ), were uniformly mixed, and sintered at 900°C to form an AZTO target of Φ50×2mm, and put the AZTO target and CuSn target into the vacuum chamber of the magnetron sputtering coating equipment. Then, the polycarbonate (PC) substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in the vacuum chamber of the magnetron sputtering coating equipment. Set the distance between the center line of the AZTO target and the CuSn target to the polycarbonate (PC) substrate as 50mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa, the argon gas with a working gas flow rate of 15 sccm is introduced, the pressure is adjusted to 2.0 Pa, and then the coating is started, and the sputtering po...

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Abstract

The invention belongs to the field of luminescent material and discloses a multilayer conductive film with high work function, a preparation method thereof and an organic electroluminescent device. The conductive film includes a sandwich-layered structure which is AZTO- CuSn- AZTO in series. The multilayer conductive film with high work function prepared in the invention has the sandwich-layered structure of AZTO- CuSn- AZTO. The conductive film has a relatively low square resistance (10 [omega] / square), a visible light transmittance up to 90% and a surface work function up to 5.3 eV, in a condition without an increase of substrate heating. Performance of the conductive film can already be comparable favourably with that of a commercialized ITO film.

Description

technical field [0001] The invention relates to the field of optoelectronic materials, in particular to a sandwich layer structure high work function multilayer conductive film and a preparation method thereof. The invention also relates to an organic electroluminescent device using the high work function multilayer conductive film. Background technique [0002] The research on transparent conductive films on flexible substrates has attracted the attention of countries all over the world, because the application prospects of transparent conductive films on flexible substrates are promising. It not only has the characteristics of transparent conductive films on glass substrates, but also has many unique advantages, such as flexible , light weight, impact resistance, easy to produce in large areas, easy to transport, etc. It has broad application prospects in flexible light-emitting devices, plastic liquid crystal displays, and solar cells with plastic substrates. Although I...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54H01L51/56C23C14/35C23C14/06
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD