Cooling method and cooling apparatus of polysilicon ingot furnace
A technology of polysilicon ingot furnace and cooling method, which is applied to the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems that the cooling method of polysilicon ingot furnace has not been reported, and achieve a reasonable cooling position , Novel method, the effect of controlling the cooling rate
Inactive Publication Date: 2012-10-17
SHENYANG SENZHIYANG AUTOMATION TECH CO LTD
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Problems solved by technology
[0005] Yet a kind of cooling method and the cooling device of the polysilicon ingot furnace that is provided with insulating door have not been reported yet
Method used
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Embodiment
[0050]Using the existing polysilicon ingot furnace, smelting 450kg polysilicon ingot, after 52 hours, the rough ingot yield is 66%; after using the refrigeration device of the present invention to grow crystal silicon, similarly smelting 450kg polysilicon ingot, after 48 hours, the rough ingot finished product The rate is 74%. Productivity and yield have been greatly improved.
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The invention discloses a cooling method of a polysilicon ingot furnace. The heat insulation cage structure in present ingot furnaces is improved; a directed temperature conduction device is added in the heat insulation cage of the ingot furnace to form two closed chambers in the heat insulation cage; the bottom of the lower chamber is provided with a heat insulation door; a refrigeration disc is arranged under the heat insulation door; and cooling crystallization of heated and fused polysilicon materials in a crucible is carried out through closing and opening the heat insulation door. When the heat insulation door of the lower chamber is closed, the crucible is heated by heaters to fuse the polycrystalline materials; when the heat insulation door is opened, the lower chamber is communicated with the refrigeration disc, a temperature gradient is formed through controlling the heating power of the upper chamber and the lower chamber, and the fused raw materials are cooled through directed temperature conduction to provide conveniences for directed and speed-controllable crystallization of polysilicon crystals. The cooling method which allows the cold part and the hot part to be ingeniously separated through the heat insulation door to form the up-down temperature gradient makes the cooling speed be controlled through controlling the size and the speed of the opening and closing of the heat insulation door and, and has the advantages of simple structure and convenient operation.
Description
technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a cooling method and a cooling device for a polysilicon ingot furnace. Background technique [0002] In the prior art, solar panels are mainly made of polysilicon. However, the production process of polysilicon is to first heat and melt the silicon raw material in the ingot furnace, and then cool down the silicon raw material in the crucible, cool and solidify to form a polysilicon ingot. The production of polysilicon ingots in the above technology mainly includes the following stages: melting, directional crystallization, annealing, and cooling. [0003] Cooling is the most important in the growth process of polycrystalline silicon ingots, and the temperature is lowered by adjusting the power of the heater and the contact distance between the heating cage and the bottom heat exchange table in order to control the growth rate and growth direction of the silicon ing...
Claims
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Login to View More IPC IPC(8): C30B28/06C30B29/06
Inventor 樊海艳
Owner SHENYANG SENZHIYANG AUTOMATION TECH CO LTD