SONOS flash memory, preparation method thereof, and operation method thereof

Abstract

The invention discloses a SONOS flash memory, a preparation method thereof, and an operation method thereof. The flash memory comprises a substrate, a source drain and a groove, wherein a tunneling oxide layer, a silicon nitride trap layer, a block oxide layer and a polysilicon control grid are positioned on the groove in order. The flash memory is characterized in: that the substrate is lightly doped silicon; and the source drain comprises different doped types consisting of a P+ region and an N+ region. Compared with the prior standard CMOS technologies, the flash memory has better compatibility. As common SONOS flash memories, the flash memory in the invention is provided with good maintenance characteristics. Meanwhile, the flash memory of the invention has an ideal small size and can effectively improve programming efficiency, reduce power consumption, and inhibit the tunneling effects.

Description

technical field

[0001] The invention belongs to the technical field of non-volatile semiconductor memory in VLSI, in particular to a SONOS type flash memory using TFET (Tunneling Field Effective Transistor). Background technique

[0002] At a time when various consumer electronics products are on the rise, the market demand for non-volatile semiconductor memory is also increasing. As a very important non-volatile memory, flash memory has recently become the darling of the industry.

[0003] Flash memory (Flash Memory, also known as flash memory) has been around for decades since its appearance. During this period, while it has been widely used, it has also been continuously improved. In chronological order, the following two basic forms appear in turn:

[0004] 1. Floating Gate Flash Memory

[0005] This structure of flash memory uses polysilicon floating gates to store electrons. Its specific structure is as figure 1 As shown, on the bulk silicon substrate 101 , in ad...

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