A kind of Sonos flash memory and its preparation method and operation method

Abstract

A SONOS flash memory device, a manufacturing method and an operation method therefor, comprising a substrate (401), a source and drain (402 and 403), and a channel. Sequentially provided on the channel are a tunneled oxide layer (404), a silicon nitride trap layer (405), a blocking oxide layer (406), and a polycrystalline control gate (407). The SONOS flash memory device is characterized in that: the substrate (401) is of lightly doped silicon, and the source and drain (402 and 403) are of different doping types, being respectively a P+ region and an N+ region. The device is provided with improved compatibility with existing standard CMOS techniques, thus allowing for effectively increased programming efficiency, reduced power consumption, inhibited feedthrough effect, and a compact size.

Description

technical field [0001] The invention belongs to the technical field of non-volatile semiconductor memory in VLSI, in particular to a SONOS type flash memory using TFET (Tunneling Field Effective Transistor). Background technique [0002] At a time when various consumer electronics products are on the rise, the market demand for non-volatile semiconductor memory is also increasing. As a very important non-volatile memory, flash memory has recently become the darling of the industry. [0003] Flash memory (Flash Memory, also known as flash memory) has been around for decades since its appearance. During this period, while it has been widely used, it has also been continuously improved. In chronological order, the following two basic forms appear in turn: [0004] 1. Floating Gate Flash Memory [0005] This structure of flash memory uses polysilicon floating gates to store electrons. Its specific structure is as figure 1 As shown, on the bulk silicon substrate 101 , in ad...

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Problems solved by technology

However, due to the limitation of the most basic programming mechanism, this SONOS-structured flash memory also has the same problems as the first type of flash memory, such as low programming efficiency, high power consumption, and difficulty in scaling down.

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