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Beam transmission system and beam transmission method

A technology of current transmission and current direction, which is applied in the beam transmission system and its transmission field, can solve problems such as uneven admission, unsatisfactory focusing or divergence effects, and achieve the effect of improving accuracy and effect and improving uniformity

Active Publication Date: 2015-02-11
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a beam transmission system and its transmission method in order to overcome the defects of uneven admission, unsatisfactory focusing or diverging effects in the prior art

Method used

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  • Beam transmission system and beam transmission method
  • Beam transmission system and beam transmission method
  • Beam transmission system and beam transmission method

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Embodiment Construction

[0034] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0035] figure 1 and figure 2 The beam delivery system shown includes a beam output device 1 , a wafer 2 , and two rod quadrupole magnets 3 and 4 .

[0036] In this embodiment, the beam emitted by the beam emitting device 1 is transmitted on the beam transmission path, and finally reaches the wafer 2 according to the preset intensity distribution and angle distribution requirements, thereby completing the processing process of the wafer 2 . The beam emitting device 1 can be an ion source, and correspondingly, the transmitted beam can be an ion beam, and the wafer 2 is used as a target workpiece, and the target workpiece can also be other components receiving the ion beam. In the present invention, a pair of rod-shaped quadrupole magnets 3 and 4 parallel to each other and located on bo...

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Abstract

The invention discloses a beam transmission system and a beam transmission method. The beam transmission system comprises a beam emitting device, a target workpiece serving as a terminal point of beam transmission, a first rod-shaped four-pole magnet and a second rod-shaped four-pole magnet. The first rod-shaped four-pole magnet and the second rod-shaped four-pole magnet are arranged on two sides of a beam transmission path in parallel mode and provided with a core respectively. One or a plurality of mutually-independent coils are arranged along the length direction of the core of the first rod-shaped four-pole magnet and the core of the second rod-shaped four-pole magnet, the coils arranged at the same positions of the cores of the first rod-shaped four-pole magnet and the second rod-shaped four-pole magnet correspond to each other, and current value of each coil of the first rod-shaped four-pole magnet and the second rod-shaped four-pole magnet is adjustable. The beam transmission system can control deflection angles and focus or diffusion of injected beam precisely so as to improved injection evenness and precision of focus or diffusion.

Description

technical field [0001] The invention relates to a beam transmission system and a transmission method thereof, in particular to a beam transmission system and a transmission method for adjusting the deflection angle of the beam and focusing or diverging the beam. Background technique [0002] Ion implantation is a standard technique used to introduce conductivity-altering impurities into semiconductor wafers. The desired impurity material is ionized in the ion source, the ions are accelerated into an ion beam having a specified energy, and the ion beam is aimed at the surface of the wafer. The energetic ions in the beam penetrate deep into the bulk of the semiconductor material and become embedded in the crystal lattice of the semiconductor material forming regions of desired conductivity. [0003] Moreover, the use of ion implantation to dope single crystal or polycrystalline silicon is a conventional process used in the manufacture of modern integrated circuits. [0004] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J37/147
Inventor 钱锋
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY