LED (light-emitting diode) tube core with ZnO-micron and nano composite structure and preparation method thereof

A nano-composite, tube-core technology, applied in the field of optoelectronics, to achieve the effect of improving LED luminous efficiency, improving luminous efficiency, and ensuring uniformity

Inactive Publication Date: 2012-10-24
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the defects and problems existing in various methods for improving LED light extraction efficiency, the present invention provides an LED tube core with a ZnO micron and nanocomposite structure that has no influence on the electrical properties of the LED and can significantly improve the luminous efficiency of the LED. A method for preparing the LED tube core is provided

Method used

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  • LED (light-emitting diode) tube core with ZnO-micron and nano composite structure and preparation method thereof
  • LED (light-emitting diode) tube core with ZnO-micron and nano composite structure and preparation method thereof
  • LED (light-emitting diode) tube core with ZnO-micron and nano composite structure and preparation method thereof

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Embodiment Construction

[0026] LED tube core with ZnO micro pattern array of the present invention, as figure 1 or figure 2 As shown, its structure is on the light-emitting surface of the LED die ( figure 1 The current spreading layer 6 of the same-plane electrode GaN-based LED die shown, figure 2 The n-type GaN layer 17) of the laser lift-off vertical structure GaN-based LED tube core is sputtered with a ZnO seed layer 7, a ZnO micro-pattern array is grown on the ZnO seed layer 7, and nanorods are grown on the ZnO micro-pattern array, A ZnO micron periodic pattern and nanorod composite structure 10 are formed. the following to figure 1 The same-plane electrode GaN-based LED is shown as an example to illustrate the growth process of an LED die with a ZnO micron periodic pattern and a nanorod composite structure 10, which specifically includes the following steps:

[0027] (1) if figure 1As shown, a complete epitaxial wafer structure is epitaxially grown on a substrate 1 by metal-organic chemic...

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Abstract

The invention discloses an LED (light-emitting diode) tube core with a ZnO-micron and nano composite structure and a preparation method of the composite structure. The LED tube core is prepared in a way that a ZnO-micron graphic array grows on a luminous surface of the LED tube core and a nano rod vertically grows on the ZnO-micron graphic array.; The preparation method comprises the following steps: (1) planting an LED epitaxial wafer and preparing the LED tube core with a complete structure; (2) sputtering a layer of ZnO seed layer on the LED luminous surface; (3) preparing a photoresist micron periodic pattern on the LED surface; (4) taking the photoresist micron periodic pattern as a template to grow the ZnO-micron graphic array; (5) removing photoresist by glue removing liquid to obtain the ZnO-micron graphic array; (6) sputtering a layer of ZnO seed layer on the ZnO-micron graphic array, and (7) growing a ZnO nano rod array on the ZnO-micron graphic array. According to the invention, not only can the emitted light be extracted at higher ratio, but also the uniformity of light emitted from the entire light emitting surface of the light emitting diode is guaranteed.

Description

technical field [0001] The present invention relates to a kind of LED tube core, and this tube core improves its luminous efficiency by having ZnO micron periodic pattern and nanorod composite structure, and the present invention also relates to this kind of LED with ZnO micron pattern array and nanorod composite structure A method for preparing a tube core belongs to the technical field of optoelectronics. Background technique [0002] Due to the advantages of energy saving and environmental protection, LEDs are widely used in daily life, such as various color display screens, LCD backlight sources, indicator lights, white light lighting and other fields. High-efficiency, high-power LEDs have become a research hotspot. Due to the high refractive index of the LED material itself (GaN refractive index n≈2.5), total internal reflection and Fresnel loss are very serious, and only a small part of light is extracted from the LED, which limits the luminous efficiency of the LED. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/00B82Y20/00
Inventor 吴拥中尹正茂郝霄鹏刘晓燕徐现刚
Owner SHANDONG UNIV
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