Static protection structure
An electrostatic protection and electrostatic terminal technology, applied in the field of semiconductor electrostatic protection, can solve the problems of large magnification, high reverse breakdown voltage, low on-resistance, etc. The effect of current increase
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[0018] Electrostatic protection structure of the present invention, its equivalent circuit is as image 3 shown.
[0019] The electrostatic protection structure of the present invention comprises an N well and a P well, and these two wells are adjacent;
[0020] In the N well, a first P+ diffusion region, a second P+ diffusion region, a first N+ diffusion region, and a second N+ diffusion region are formed, and the first N+ diffusion region and the second N+ diffusion region are located in the first P+ diffusion region. region and the second P+ diffusion region, the first P+ diffusion region and the second P+ diffusion region constitute a PMOS transistor, and the first P+ diffusion region and the second P+ diffusion region are respectively used as the drain and source of the PMOS transistor. The gate of the PMOS transistor is formed above the channel region between the first P+ diffusion region and the second P+ diffusion region; one of the two P+ diffusion regions and one of...
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