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Preparation method of meta-material based on polysilicon, and meta-material based on polysilicon

A technology of polysilicon and metamaterials, which is applied in the preparation of metamaterials based on polysilicon, and in the field of metamaterials based on polysilicon, can solve the problems of the preparation technology of metamaterials without polysilicon, and achieve high controllability, high controllability, and design compliance required effect

Inactive Publication Date: 2012-11-14
KUANG CHI INST OF ADVANCED TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no polysilicon-based metamaterial preparation technology in the prior art

Method used

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  • Preparation method of meta-material based on polysilicon, and meta-material based on polysilicon
  • Preparation method of meta-material based on polysilicon, and meta-material based on polysilicon
  • Preparation method of meta-material based on polysilicon, and meta-material based on polysilicon

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] mixed with figure 2 , is a flow chart of a polysilicon-based metamaterial preparation method provided by the first implementation of the present invention, including the following steps:

[0025] S21: Oxidizing the silicon substrate to obtain a silicon dioxide insulating layer.

[0026] Wherein, the silicon substrate can be oxidized by a dry oxidation method or a wet oxidation method. Dry oxidation and wet oxidation are technologies well known to those skilled in the art, and will not be repeated here.

[0027] S22: Deposit a layer of polysilicon on the silicon dioxide insulating layer.

[0028] It can be understood that during the process of depositing polysilicon, impurities are doped into the polysilicon to improve the conductivity of the polysilicon.

[0029] S23: coating a layer of photoresist on the polysilicon.

[0030] S24: Perform photolithography on the photoresist according to the preset microarray structure.

[0031] In the specific implementation proc...

Embodiment 2

[0036] See Figure 3, which is a flow chart of a method for preparing a flexible substrate provided by the second embodiment of the present invention, including the following steps:

[0037] S31: Using a wet oxidation method to oxidize the silicon substrate to obtain a silicon dioxide insulating layer.

[0038] Wherein, the method of wet oxidation belongs to the technology known to those skilled in the art, and will not be repeated here.

[0039] S32: Deposit a layer of polysilicon on the silicon dioxide insulating layer.

[0040] In a specific implementation process, the thickness of the deposited polysilicon is set according to specific requirements.

[0041] It can be understood that during the process of depositing polysilicon, impurities are doped into the polysilicon to improve the conductivity of the polysilicon.

[0042] S33: coating a layer of photoresist on the polysilicon, and performing photoetching on the photoresist according to the preset microarray structure. ...

Embodiment 3

[0050] mixed with Figure 4 , is a flow chart of a method for preparing a flexible substrate provided in Embodiment 3 of the present invention, including the following steps:

[0051] S41: Using a dry oxidation method to oxidize the silicon substrate to obtain a silicon dioxide insulating layer.

[0052] Wherein, the method of dry oxidation belongs to the technology known to those skilled in the art, and will not be repeated here.

[0053] S42: Deposit a layer of polysilicon on the silicon dioxide insulating layer.

[0054] In a specific implementation process, the thickness of the deposited polysilicon is set according to specific requirements.

[0055] It can be understood that during the process of depositing polysilicon, impurities are doped into the polysilicon to improve the conductivity of the polysilicon.

[0056] S43: Coating a layer of photoresist on the polysilicon, and performing photoetching on the photoresist according to the preset microarray structure.

[0...

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Abstract

The invention provides a preparation method of a meta-material based on polysilicon. The method comprises the steps that: a silicon substrate is oxidized, such that a silica insulating layer is obtained; a layer of polysilicon is deposited on the silica insulating layer; a layer of photoresist is coated on the polysilicon, and the photoresist is photo-etched according to a preset micro-array structure; the pattern on the photoresist obtained through photo-etching is transferred to the polysilicon; and the photoresist coated on the polysilicon is removed, such that the meta-material with the micro-array structure is obtained. The embodiment of the invention also provides a meta-material based on polysilicon. With the method provided by the invention, meta-materials with micro-structures with higher controllability and better accordance with design requirements can be obtained.

Description

【Technical field】 [0001] The invention relates to the technical field of composite materials, in particular to a method for preparing a polysilicon-based metamaterial and the polysilicon-based metamaterial. 【Background technique】 [0002] With the rapid development of high-tech such as radar detection, satellite communication, and aerospace, as well as the rise of research fields such as anti-electromagnetic interference, stealth technology, and microwave anechoic chambers, research on microwave-absorbing materials has attracted more and more attention. Because metamaterials can have very wonderful electromagnetic effects, they can be used in the fields of wave-absorbing materials and invisible materials, and become a hot spot in the field of wave-absorbing materials. The properties and functions of metamaterials mainly come from their internal structure. How to prepare a three-dimensional fine structure with periodic arrangement has become the key to the preparation technol...

Claims

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Application Information

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IPC IPC(8): C30B29/06H01Q15/00B82Y40/00B82Y30/00
Inventor 刘若鹏赵治亚杨宗荣缪锡根
Owner KUANG CHI INST OF ADVANCED TECH