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Solar-grade polycrystalline crystal brick surface treatment method

A surface treatment, solar-level technology, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of polysilicon wafer edge jumping and high edge defect rate of polysilicon wafers, so as to reduce edge jumping and eliminate lines scar effect

Inactive Publication Date: 2012-11-14
镇江荣德新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when dealing with the line marks on the surface of polycrystalline tiles, a new damage layer will be formed on the surface of polycrystalline tiles, which will easily lead to defects and defects such as edge jumping on the edge of polycrystalline silicon wafers after slicing, thus making the edge defect rate of polycrystalline silicon wafers higher.

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  • Solar-grade polycrystalline crystal brick surface treatment method

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Embodiment Construction

[0024] Embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0025] figure 1 It is a schematic flow chart of the surface treatment method of solar-grade polycrystalline bricks of the present invention. Such as figure 1 As shown, the solar-grade polycrystalline brick surface treatment method provided by the invention is carried out according to the following steps:

[0026] Step A: mechanically grinding the surface of the polycrystalline brick;

[0027] Step B: put the ground polycrystalline brick into an alkaline etchant for corrosion, and remove the damaged layer on the surface of the polycrystalline brick;

[0028] Step C: using an acid to react with the alkali remaining on the surface of the polycrystalline brick and the generated silicate;

[0029] Step D: cleaning and drying the polycrystalline bricks.

[0030] In the step A, use a grinding machine to mechanically grind the surface of the polyc...

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Abstract

The invention discloses a solar-grade polycrystalline crystal brick surface treatment method. The method sequentially comprises the following steps: 1, mechanically grinding surfaces of a polycrystalline crystal brick; 2, corroding the ground polycrystalline crystal brick in an alkaline corrosion agent, and removing the damage layers of the surfaces of the polycrystalline crystal brick; 3, reacting an acid with an alkali residual on the surfaces of the polycrystalline crystal brick and generated silicate; and 4, cleaning and drying the polycrystalline crystal brick. By adopting the polycrystalline crystal brick surface treatment method provided in the invention to treat the surfaces of the polycrystalline crystal brick generated by cutting through a fretsaw, the wire marks residual after the cutting are eliminated through the mechanical grinding, and the damage layers of the surfaces of the polycrystalline crystal brick are removed through the alkaline corrosion, thereby defects and bad phenomena of side damage and the like of sides of silicon chips generated after the slicing of the polycrystalline crystal brick are reduced.

Description

technical field [0001] The invention relates to the field of processing solar-grade semiconductor polycrystalline silicon wafers, in particular to a surface treatment method for solar-grade polycrystalline crystal bricks. Background technique [0002] During the processing of solar-grade semiconductor polysilicon wafers, the polycrystalline bricks produced by wire sawing cannot be sliced ​​directly due to their rough surface and serious line marks. [0003] Before slicing the polycrystalline crystal brick, it is necessary to process the line marks on the surface of the polycrystalline crystal brick. The processing method of the surface line mark of the polycrystalline crystal brick in the prior art is: use a diamond grinding wheel to grind the polycrystalline crystal brick The surface is subjected to physical mechanical grinding treatment to remove the line marks on the surface of polycrystalline bricks. However, a new damage layer will be formed on the surface of the polyc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10
Inventor 唐威包剑赵学军
Owner 镇江荣德新能源科技有限公司