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Silicon-based triple-junction solar battery using germanium as tunneling junction

A solar cell and tunneling junction technology, applied in the field of solar cells, can solve problems such as anti-phase domains and Si bottom cell lattice mismatch, and achieve the effects of thin thickness, solving lattice mismatch, and reducing dislocation density

Inactive Publication Date: 2012-11-14
XIAMEN UNIV
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Problems solved by technology

[0006] The object of the present invention is to provide a silicon-based triple-junction solar cell with germanium as the tunnel junction in order to solve the problems of lattice mismatch and anti-phase domains between the Si bottom cell and the III-V sub-cell on the epitaxy.

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  • Silicon-based triple-junction solar battery using germanium as tunneling junction

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with drawings and embodiments.

[0022] see figure 1 , the embodiment of the present invention is provided with a Si bottom cell 1, a Ge tunnel junction 2, a GaAs middle cell 3, an AlGaAs / InGaP tunnel junction 4, an InGaP top cell 5 and a contact layer 6, and the Si bottom cell 1 is constructed on a P-type On the Si substrate, the Ge tunneling junction 2 connects the Si bottom cell 1 and the GaAs middle cell 3 , the AlGaAs / InGaP tunneling junction 4 connects the GaAs middle cell 3 and the InGaP top cell 5 , and the contact layer 6 is provided on the InGaP top cell 5 .

[0023] The thickness of the P-type Si substrate may be 100-600 μm; the thickness of the Si substrate may be 100-600 μm, and the doping concentration may be 1×10 15 ~5×10 17 cm -3 .

[0024] The thickness of the emitter region of the Si bottom cell 1 may be 0.05-1 μm, and the doping concentration may be 1×10 18 ~5×10 19 cm -3 .

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Abstract

The invention relates to a solar battery and particularly relates to a silicon-based triple-junction solar battery using germanium as a tunneling junction. The silicon-based triple-junction solar battery comprises a Si bottom battery, a Ge tunneling junction, a GaAs intermediate battery, an AlGaAs / InGaP tunneling junction, an InGap top battery and a contact layer, the Si bottom battery is constructed on a P-type Si substrate, the Ge tunneling junction is connected with the Si bottom battery and the GaAs intermediate battery, the AlGaAs / InGaP tunneling junction is connected with the GaAs intermediate battery and the InGap top battery, and the contact layer is arranged on the InGap top battery. By means of the Ge tunneling junction, effective segmentation of a mismatching dislocation region and an antiphase domain region is achieved between Si and GaAs, so that problems of series connection of the Si bottom battery and an III-V group sub-battery, lattice mismatching and antiphase domain are solved, and battery epitaxial crystal qualities and battery conversion efficiencies are improved.

Description

technical field [0001] The invention relates to a solar cell, in particular to a silicon-based triple-junction solar cell with germanium as a tunnel junction. Background technique [0002] As the third generation of solar cells, III-V multi-junction solar cells have become the most widely used power source in space due to their high energy conversion efficiency and radiation resistance, and have caused great changes in people's daily life. At present, the efficiency of GaInP / GaAs / Ge triple-junction cells has reached 32% under the condition of no concentration. ([1]R.R.King, C.M.Fetzer, Lattice-matched and metamorphic GaInP / GaInAs / Ge concentrator solar cells, Presented at the 3rd World Conference on Photovoltaic Energy Conversion, 2003) But the conversion efficiency needs to be further improved and the manufacturing cost is relatively high , which still greatly limits its large-scale application on the ground. [0003] First of all, the current of the GaInP / GaAs / Ge triple-j...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0687
CPCY02E10/50Y02E10/544
Inventor 陈松岩李欣刘蕊刘晶晶孙钦钦
Owner XIAMEN UNIV
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