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Method and device for preparing ZnO film by two-step deposition method

A deposition method and thin-film technology, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as environmental pollution, large amount of precursors, and low deposition efficiency.

Inactive Publication Date: 2011-12-21
SHANGHAI UNIV
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Problems solved by technology

[0003] However, the first four methods all need to be carried out in a vacuum environment, the equipment is complex, and the cost of preparing thin films is high.
Although ultrasonic atomization pyrolysis can overcome these shortcomings, the deposition efficiency is low, the amount of precursor is large, the aerosol contained in the exhaust gas will pollute the environment, and the uniformity of the film needs to be improved.

Method used

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  • Method and device for preparing ZnO film by two-step deposition method
  • Method and device for preparing ZnO film by two-step deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The ZnO thin film preparation process and steps in the present embodiment are as follows:

[0023] 1) Zn(CH 3 COO) 2 solution, pour it into the atomization tank of the ultrasonic nebulizer.

[0024] 2) Turn on the temperature controller of the heating furnace to raise the heating furnace to 400°C.

[0025] 3) Turn on the ultrasonic nebulizer and run the nebulizer to a stable working state.

[0026] 4) Adjust the flow rate of the carrier gas to keep the flow rate at 3L / min. And turn on the carrier gas and turn on the high voltage power supply.

[0027] 5) Grow for about 40 minutes, then turn off the high-voltage power supply and the atomizer, and let the prepared solution containing ZnO nanoparticles stand for 3 hours.

[0028] 6) Remove the supernatant, add 40mL deionized water, and disperse the precipitate with an ultrasonic cleaner

[0029] 7) Pour the decomposed solution into a centrifuge tube for the first separation.

[0030] 8) Take out the centrifuge tube,...

Embodiment 2

[0034] The growth and deposition process steps in this embodiment are completely the same as those in Embodiment 1 above, except that some process parameters are changed. Its different process parameters are: (1) Zn (CH3COO) The concentration of the solution is 0.05mol / L (2) The time for growing nanoparticles is 2 hours (3) The rotating speed of the spin coater is set to be at first the rotating speed of 400rpm Turn down for 30s, then turn down for 30s at 2000rpm. Finally, a ZnO thin film is obtained.

Embodiment 3

[0036] The growth and deposition process steps in this embodiment are completely the same as those in Embodiment 1 above, except that some process parameters are changed. Its different process parameters are: (1) Zn(CH 3 COO) 2 The concentration of the solution was 0.15mol / L (2) the time for growing nanoparticles was 1 hour (3) the rotation speed of the spin coater was set to first rotate at 500rpm for 30s, and then at 1000rpm for 60s. Finally, a ZnO thin film is obtained.

[0037] The preparation of ZnO nanoparticles in the examples adopts a special ultrasonic atomization heat method device.

[0038] see figure 1 .

[0039] The device includes: a nitrogen bottle 1, a rubber hose 2, an atomizer 3, an atomization tank 4, a quartz conduit 5, an electric heating furnace 6, a beaker 7, a charged nozzle 8, a high-pressure generator 9, and a temperature controller 10; An atomizer 3 is arranged at the bottom of the atomization tank 4 filled with the zinc acetate precursor soluti...

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Abstract

The invention relates to a method for preparing a ZnO film by a two-step deposition method and a device thereof, belonging to the technical field of nano-crystal film preparation methods. The method is characterized in that principles and equipment of ultrasonic atomization pyrolysis and sol-gel method are comprehensively utilized to deposit the ZnO film in two steps; the first step is to prepareZnO nano-particles by improved ultrasonic atomization pyrolysis equipment; the equipment is mainly characterized in that a high-pressure generation source and a charging nozzle are additionally arranged to a spray conduit, and a quartz pipe passes through the whole heating furnace, so that the particles are directly introduced to a beaker filled with a certain amount of deionized water; and in the second step, the ZnO nano-particles are repeatedly cleaned by an ultrasonic cleaner and a centrifugal machine, and are finally applied to a substrate by a spinning coater. By adopting the method, environmental pollution of aerosol generated in the ultrasonic atomization pyrolysis preparing process can be avoided, and the ZnO film with high crystal quality can be obtained.

Description

technical field [0001] The invention relates to a method and a device for preparing a ZnO thin film by a two-step deposition method, and belongs to the technical field of nano crystal thin film preparation methods. Background technique [0002] ZnO is a direct wide bandgap semiconductor material with a room temperature bandgap of 3.37eV and an exciton binding energy of 60meV. Due to these excellent properties, ZnO has good potential applications in short-wavelength light-emitting diodes, window layers of solar cells, ultraviolet light detectors, and sensors. The preparation methods of ZnO thin films mainly include magnetron sputtering, pulsed laser deposition, molecular beam epitaxy, chemical vapor deposition, ultrasonic atomization pyrolysis and so on. [0003] However, the first four methods all need to be carried out in a vacuum environment, the equipment is complex, and the cost of preparing thin films is high. Although ultrasonic atomization pyrolysis can overcome the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/208
Inventor 赵岳吕志勇梁小燕李召王林军闵嘉华
Owner SHANGHAI UNIV
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