Method for preparing zirconium nitride film on silicon substrate by magnetron sputtering
A technology of magnetron sputtering and radio frequency magnetron sputtering, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve the problem of large surface fluctuations, slow growth of ALD materials, and high-quality single crystals Issues such as the report of film growth results, to achieve the effects of small surface fluctuations, good application and promotion value, growth rate and film formation area
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[0022] At present, due to the slow growth rate of silicon nitride deposition prepared by atomic layer deposition, although high-purity ZrN films with nanometer-scale thickness can be prepared, due to the low growth temperature, only amorphous or polycrystalline materials with poor crystalline quality can be grown; MOCVD process The preparation and growth of ZrN thin films is still in research and development, and there is no high-quality single crystal thin film that can realize the X-ray rocking curve (XRC) half-maximum width (FWHM) of the ZrN (111) diffraction peak on Si substrates below 1° The growth results are reported; the ion beam epitaxy (IBE) process realizes the growth of ZrN thin film with a single preferred orientation, but because of the small film area (2cm×2cm) of the ion beam epitaxy process, it is not suitable for making devices by using the existing semiconductor device process.
[0023] Magnetron sputtering is still the main process for preparing and growing ...
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