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System and method for preparing graphene by means of SiC thermal cracking

A graphene and thermal cracking technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of affecting the growth quality of graphene, the SiC surface is easily polluted, and the MBE system cannot achieve etching and growth.

Inactive Publication Date: 2012-11-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, the MBE system cannot achieve in-situ etching and growth
The SiC surface is easily contaminated during ex situ growth, thus affecting the growth quality of graphene

Method used

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  • System and method for preparing graphene by means of SiC thermal cracking

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Embodiment Construction

[0021] Attached below figure 1 and specific examples to further illustrate specific embodiments of the present invention.

[0022] The system for preparing graphene by SiC pyrolysis method includes a gas-refined quartz tube 1 as a vacuum chamber, a SiC substrate 9 located in the middle of the vacuum chamber, an induction heating graphite boat 10 and a carbon felt insulation layer 11. The SiC substrate 9 is located in the sample chamber of the graphite boat 10, the graphite boat is located in the middle of the carbon felt insulation layer 11, and the carbon felt insulation layer 11 is close to the tube wall of the vacuum chamber and forms a hollow structure;

[0023] One end of the vacuum chamber body has a vacuum chamber door 2 for opening and closing the vacuum chamber body. Below the vacuum chamber door 2, a vacuum chamber composed of a damper valve 3, a molecular pump 4 and a mechanical pump 5 is sequentially connected. The road is used to evacuate the vacuum cavity as nee...

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Abstract

The invention relates to a system and a method for preparing graphene by means of SiC thermal cracking. The system comprises a gas-refining quartz tube serving as a vacuum cavity, an SiC substrate, an induction heating graphite boat and a carbon felt heat preservation layer, wherein the SiC substrate is arranged in the middle of the vacuum cavity and in a graphite boat sample groove. The graphite boat is arranged in the middle of the carbon felt heat preservation layer. The carbon felt heat preservation layer is closely attached to the wall of the vacuum cavity to form a hollow structure. One end of the vacuum cavity is provided with a vacuum cavity door used for opening and closing the vacuum cavity. A vacuumizing gas circuit formed by sequentially connecting a baffle valve, a molecular pump and a mechanical pump is arranged below the vacuum cavity door and used for vacuumizing the vacuum cavity according to needs. The other end of the vacuum cavity is provided with an infrared detection window made of glass permeable by infrared rays. The system and the method for preparing graphene by means of SiC thermal cracking have the advantages that high-quality graphene can be prepared at the high barometric-pressure state (0.1-1 barometric pressure).

Description

technical field [0001] The invention relates to the preparation technology of graphene. Background technique [0002] Graphene is a two-dimensional new material composed of carbon atoms with a hexagonal structure. It was discovered in 2004 by Andre Heim and Konstantin Novoselov of the University of Manchester, which caused a global sensation. Andre Heim and Kang Standin Novoselov won the 2010 Nobel Prize in Physics for this. Graphene has the highest electron mobility and the largest current density among all current materials, and also has a bipolar field effect, which can realize continuous modulation from N-type to P-type. Therefore, it has good military and civilian prospects in millimeter wave and terahertz devices. Among many graphene preparation methods such as mechanical exfoliation, chemical vapor deposition, chemical method, and SiC thermal cracking method, due to the epitaxial growth, less crystal defects, large area, high quality, and compatibility with the exis...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/188
Inventor 陈远富郝昕李萍剑王泽高刘竞博张万里李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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