Preparation method for fast recovery diode chip
A technology for recovering diodes and chips, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of small reverse recovery softness and poor reverse recovery characteristics, and achieve the improvement of reverse recovery softness and reverse recovery. Reduced recovery time and improved reverse recovery characteristics
Inactive Publication Date: 2012-11-21
NANTONG MINICHIP MICRO ELECTRONICS
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[0002] The more advanced technology in the manufacture of fast recovery diode chips today is to use N-type single-sided polished wafers with a certain resistivity, diffuse N++-type semiconductor impurities on the back, and diffuse P-type semiconductor impurities on the front. The process steps are: cleaning, Diffusion on the back, diffusion on the front, introduction of complex impurity centers on the back, grooves, glass passivation, photoetching lead holes, coating, photoetching metal films and alloys, back coating, and scribing. The disadvantages of this method are: the reflection of the product Poor recovery characteristics, low reverse recovery softness
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[0025] The steps for producing fast recovery diode chips are as follows by selecting N-type silicon single-sided polished wafers with a resistivity of 15-60Ω.cm.
[0026] 1. Silicon wafer cleaning: successively use electronic cleaning fluid (NH 4 OH:H 2 o 2 :H 2 The volume ratio of O is 1:2:5) and electronic cleaning fluid (HCL:H 2 o 2 :H 2 The volume ratio of O is 1:2:6) for cleaning, the temperature of the cleaning solution is 85±5°C, and the cleaning time is 10 minutes. Rinse with deionized water (resistivity greater than 14MΩ.cm) for 30 minutes, and shake dry.
[0027] 2. Oxidation: Put the silicon wafer at 1150±5°C in O 2 Oxidation in the atmosphere for 15 to 20 hours.
[0028] 3. Front protection: use HF solution to remove the oxide layer on the back of the silicon wafer, and rinse it with deionized water. Then clean the silicon wafer, the method is the same as step 1.
[0029] 4. The first diffusion: pre-diffusion and re-diffusion of phosphorus, pre-diffusion ...
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Abstract
The invention discloses a preparation method for a fast recovery diode chip, relating to the field of manufacturing technology of semiconductor devices. The preparation method comprises the following process steps: cleaning a silicon chip, oxidizing, diffusing for the first time, cleaning for the second time, diffusing for the second time, cleaning for the third time, diffusing for the third time, oxidizing, introducing impurities into a recombination center of a semiconductor on the backside, photo-etching for the first time, forming a mesa, glass-passivating, photo-etching for the second time, coating a film on the front side, photo-etching for the third time, coating a film on the backside, and finally dividing into independent chips. According to the product disclosed by the invention, the breakdown voltage can be adjusted as required by a user; and the product has a large backward recovery softness factor and a short backward recovery time.
Description
technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for preparing a fast recovery diode chip. Background technique [0002] The more advanced technology in the manufacture of fast recovery diode chips today is to use N-type single-sided polished wafers with a certain resistivity, diffuse N++-type semiconductor impurities on the back, and diffuse P-type semiconductor impurities on the front. The process steps are: cleaning, Diffusion on the back, diffusion on the front, introduction of complex impurity centers on the back, grooves, glass passivation, photoetching lead holes, coating, photoetching metal films and alloys, back coating, and scribing. The disadvantages of this method are: the reflection of the product The recovery characteristics are poor, and the softness of reverse recovery is small. For a long time, in the field of semiconductor device manufacturing, people have made unremitting efforts ...
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Login to View More IPC IPC(8): H01L21/22H01L21/329
Inventor 周明程万坡穆连和张兴杰
Owner NANTONG MINICHIP MICRO ELECTRONICS