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LDMOS device based on high K material

A technology of devices and drift regions, which is applied in the field of electronics and can solve problems such as large leakage currents

Inactive Publication Date: 2012-11-21
KUNSHAN HUATAI ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, reducing the gate length needs to overcome the resulting short-channel effect of LDMOS; in addition, reducing the gate length requires a corresponding reduction in the thickness of the gate oxide, which brings a large leakage current. These factors limit Reduced gate length of LDMOS devices

Method used

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  • LDMOS device based on high K material
  • LDMOS device based on high K material
  • LDMOS device based on high K material

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Embodiment Construction

[0022] Specific embodiments of the present invention will be further described in detail below.

[0023] Such as figure 1 As shown, taking N-type LDMOS as an example, a kind of LDMOS device based on a high-K material in the first preferred embodiment of the present invention includes a highly doped substrate 1, and the resistivity of the substrate 1 is usually 0.005-0.05Ω ·cm 0.005|0.05Ω|cm, there is an epitaxial layer 2 on the highly doped substrate 1, and its resistivity is usually 10-100Ω·cm. The source 6 and the drain 10 are composed of heavily doped N-type, and their doping concentration is usually between Above, the metal wire 5 and the metal wire 11 are metal wires used to connect the source and the drain respectively. The N-type doped drift region 9 is used to improve the breakdown voltage of the LDMOS device. P-type heavy doping 4 is used to provide a fixed potential for the P-type channel to prevent parasitic Bipolar conduction. P-Body7 is used to form the chann...

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Abstract

The invention discloses an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device based on a high K material. The LDMOS device comprises a substrate on which a source electrode and a drain electrode are arranged; the drain electrode is connected with an N-type drift region; the source electrode and the N-type drift region are connected via a channel; a grid electrode is arranged on the channel; an insulation layer is arranged between the grid electrode and the channel. The LDMOS device is characterized in that the insulation layer comprises a high K layer made from a high K material, and sequentially comprises three layers, i.e. a SiO2 layer, a high K layer and another SiO2 layer. According to the invention, on the premise of no incensement of leakage current of a grid, the high K material with higher dielectric constant is adopted to lower thickness of the insulation layer.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to an RF-LDMOS device whose breakdown voltage can be adjusted. Background technique [0002] Compared with transistors, LDMOS (laterally diffused metal oxide semiconductor) devices have obvious advantages in terms of key device characteristics, such as gain, linearity, switching performance, heat dissipation performance, and reduction of stages, and can achieve high gain and high The breakdown voltage is high, so it is widely used in switching tubes for DC-DC conversion and RF power amplifiers. In the structural design of LDMOS, if the gate length of LDMOS is reduced, the cut-off frequency of LDMOS can be increased, so that LDMOS can work at a higher frequency. Similarly, a smaller gate length can reduce the size of the LDMOS and increase the specific on-resistance. However, reducing the gate length needs to overcome the resulting short-channel effect of LDMOS; in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/51
CPCH01L29/517H01L29/7835H01L29/513H01L29/1045H01L29/42368
Inventor 曾大杰余庭赵一兵张耀辉
Owner KUNSHAN HUATAI ELECTRONICS TECH CO LTD
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