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Growth substrate and light emitting device

A technology for growing substrates and silicon substrates, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., and can solve problems such as differences in lattice constants, differences in thermal expansion coefficients, and crystal defects

Active Publication Date: 2015-12-02
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when growing a nitride semiconductor layer (such as a GaN layer) on a silicon substrate, there is a difference in lattice constant and a difference in thermal expansion coefficient between the silicon substrate and the GaN layer, and thus crystal defects occur.

Method used

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  • Growth substrate and light emitting device
  • Growth substrate and light emitting device
  • Growth substrate and light emitting device

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Embodiment Construction

[0029] Hereinafter, a number of embodiments will be described with reference to the drawings.

[0030] It should be understood that when an element is considered to be "on" or "under" another element, it can be directly above / under the element, and one or more intervening elements may also be present . When an element is considered to be "on" or "under", it may include "under the element" and "above the element" based on the element.

[0031] In the drawings, for convenience and clarity of description, the thickness or size of each element may be enlarged, omitted or schematically shown. In addition, the size of each component does not indicate the actual size of each component. Also, throughout the description of the drawings, the same reference numerals denote the same elements. Hereinafter, a light emitting device and a manufacturing method thereof, and a light emitting device package according to various embodiments will be described with reference to the accompanying drawin...

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Abstract

Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids.

Description

[0001] Cross references to related applications [0002] This application claims the priority of Korean Patent Application No. 10-2011-0047699 filed in Korea on May 20, 2011, and hereby incorporates its entire contents by reference as if it were fully stated here. Technical field [0003] The embodiment of the present invention relates to a growth substrate for growing semiconductor materials and a light emitting device. Background technique [0004] The light emitting device utilizes a phenomenon in which light is emitted when a forward current flows through a PN junction diode of a compound semiconductor, and the device is mainly used as a light source of a display device. This light-emitting device is different from an electric bulb, does not require a filament, is resistant to vibration, and has a long service life and a fast response time. [0005] Although epi-layers are usually grown on sapphire substrates, a technique for growing epi-layers on silicon substrates has been deve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12
CPCH01L33/06C30B25/183C30B29/403H01L21/02381H01L21/02458H01L21/02505H01L21/02513H01L21/0254H01L21/02576H01L21/02579H01L33/007H01L33/12H01L33/20H01L2224/48091H01L2224/49107H01L2924/00014
Inventor 李定植
Owner SUZHOU LEKIN SEMICON CO LTD