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Base plate for high-power electronic device module and preparation method thereof

An electronic device and high-power technology, which is applied in the field of substrates for high-power electronic device modules and its preparation, can solve the problems of reduced heat dissipation performance of metal substrates, low thermal conductivity of insulating layers, high manufacturing costs, etc., and achieve insulation performance while taking into account , high thermal conductivity while taking into account the effect

Inactive Publication Date: 2012-12-05
熊大曦
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are two commonly used ceramic substrates, one is aluminum oxide (Al2O3), and the other is silicon nitride. The thermal conductivity of aluminum nitride is 20-30w / mk, and generally it can only be used for small power component packages. The thermal conductivity of silicon nitride can reach 170w / mk, which is an ideal high thermal conductivity packaging substrate material, but its high manufacturing cost and the weakness of difficult machining limit its use
[0004] The other is the metal substrate, because there must be an insulating layer between the metal material and its circuit board to ensure the isolation of the circuit, and the thermal conductivity of the insulating layer is usually low, which leads to a decrease in the heat dissipation performance of the entire metal substrate, far from Ceramic substrates below silicon nitride

Method used

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  • Base plate for high-power electronic device module and preparation method thereof
  • Base plate for high-power electronic device module and preparation method thereof
  • Base plate for high-power electronic device module and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Such as figure 1 As shown, a substrate for a high-power electronic device module includes a metal substrate 1 with high thermal conductivity and an insulating layer 2 with high thermal conductivity fixedly connected to the bottom surface of the metal substrate 1 . The metal substrate 1 is provided with a fixing hole 11, and a layer of gold-plated layer 8 is provided on the metal substrate 1. The LED chip 6 can be directly welded to the common anode (or common cathode) on the gold-plated layer 8. This installation method makes the metal As a part of the circuit, the substrate has a simpler structure, omits the circuit layer and insulating layer, and has a better heat dissipation effect. The setting of the gold-plated layer 8 further improves the electrical connection performance between the LED chip 6 and the metal substrate 1 .

[0030] The high thermal conductivity insulating layer 2 is one of diamond, synthetic diamond, diamond-like carbon, silicon carbide, silicon ni...

Embodiment 2

[0034] Such as figure 2 As shown in Example 1,

[0035] Such as figure 1 As shown, a substrate for a high-power electronic device module includes a metal substrate 1 with high thermal conductivity and an insulating layer 2 with high thermal conductivity fixedly connected to the upper surface of the metal substrate 1 . The metal substrate 1 is provided with a fixing hole 11, and a layer of metal circuit layer 4 is provided on the top of the high thermal conductivity insulating layer 2, and the LED chip 6 can be directly soldered to the common anode (or common cathode) on the metal circuit layer 4, This installation method makes the insulating layer 2 with high thermal conductivity serve as the insulating layer between the metal circuit layer 4 and the metal substrate, and has the functions of electrical isolation and high heat dissipation performance at the same time. The structure is simpler, and the traditional insulating layer with low thermal conductivity is omitted. Bet...

Embodiment 3

[0041] Such as image 3 As shown, the rest are the same as in Embodiment 1, except that the inner surface of the fixing hole 11 of the metal substrate 1 is also processed with a high thermal conductivity insulating layer 2, which makes the electrical insulation performance of the present invention more excellent, and is more convenient for installation and circuit arrangement. cloth.

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Abstract

The invention discloses a metal base plate for a high-power electronic device module and a preparation method thereof. A high heat conductivity insulating layer is directly formed on the metal base plate, so that the whole base plate has the characteristics of convenience in manufacturing and low cost and has the advantage that the insulation performance and high heat conductivity of the ceramic base plate are preserved at the same time.

Description

technical field [0001] The invention relates to the field of high-power electronic products, in particular to a substrate for a high-power electronic device module and a preparation method thereof. Background technique [0002] In the electronics industry, high-power communication circuit boards or high-power LED light sources often generate a lot of heat under normal operation. These heat must be discharged to the environment in time, otherwise it will cause the temperature of electronic components to rise and affect their normal work. , and sometimes even corrupted. [0003] In order to achieve good heat dissipation, the commonly used substrates are ceramic substrates or metal substrates. There are two commonly used ceramic substrates, one is aluminum oxide (Al2O3), and the other is silicon nitride. The thermal conductivity of aluminum nitride is 20-30w / mk, and generally it can only be used for small power component packages. The thermal conductivity of silicon nitride c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/05H05K3/00H01L33/48H01L33/64H01L33/00
Inventor 熊大曦
Owner 熊大曦