Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot

A production method and a single-crystal-like technology, applied in the field of solar power generation, can solve the problem of high cost

Inactive Publication Date: 2012-12-19
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] This Czochralski monocrystalline ingot cut seed crystal has the advantages of consistent crystal orientation, high purity, and smooth surface, but its cost is relatively high. The silicon material cost of a 120kg Czochralski monocrystalline ingot is 25,000 yuan, and the processed silicon ingot The cost is 15,000 yuan, and a single crystal rod can only be used for two furnaces of single crystal ingot casting, that is, the cost of one furnace of single crystal only for cutting seed crystals is 20,000 yuan

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  • Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot
  • Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot
  • Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot

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Embodiment Construction

[0041] The core of the present invention is to provide a method for manufacturing similar single-crystal ingot seed crystals, which can reduce the use of materials and reduce production costs. In addition, another core of the present invention is to provide a method for making a quasi-single crystal ingot.

[0042] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0043] Please refer to figure 2 , figure 2 It is a flow chart of a specific embodiment of the method for making a quasi-single crystal ingot seed crystal provided by the present invention.

[0044] In a specific embodiment, such as figure 2 As shown, the present invention provides a method for manufacturing a single-crystal ingot seed crystal, which includes the following steps:

[0045] S11: Provide an overall...

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Abstract

The invention discloses a method for manufacturing seed crystal of Mono-like ingot, comprising the following steps: cutting a whole single crystal rod (1) with four ridges (11) on the surface into a plurality of small sections of cylindrical single crystal rods (2); cutting the cylindrical single crystal rods (2) into a main part (3) in the middle and flaw-pieces (4) outside the main part (3) along four first planes (12) which pass by every two adjacent ridges (11) or four second planes (13) which are parallel to the four first planes (12); arranging the rectangular side surfaces (41) of the plurality of flaw-pieces (4) juxtaposedly downwards, and splicing to form the seed crystal. Because the flaw-pieces are used to form the seed crystal, the manufacturing cost of the Mono-like ingot is lowered. The invention further discloses a method for manufacturing the Mono-like ingot. The two methods have the same technical effects.

Description

technical field [0001] The invention relates to the technical field of solar power generation, in particular to a method for manufacturing a single-crystal ingot-like seed crystal. In addition, the invention also relates to a method for making a quasi-single crystal ingot. Background technique [0002] At present, the cells used in solar cell modules on the market are mainly based on monocrystalline silicon wafers and polycrystalline silicon wafers. The crystal orientation of the monocrystalline cell is [100], and the surface of the silicon wafer after alkali texturing is an inverted pyramid texture, with low reflectivity and high conversion efficiency. However, in the process of pulling single crystal silicon rods, the operation cycle of a single furnace is long, the production capacity is small, and the cost is high. The polycrystalline silicon wafers used in polycrystalline solar cells are derived from polycrystalline ingots. The single furnace has a short operating cyc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 何广川潘家明
Owner YINGLI GRP
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