Self-controlled heating system for single crystal furnace

Abstract

The invention discloses a self-controlled heating system for a monocrystal furnace. The self-controlled heating system comprises an upper graphite heater and a lower graphite heater which are arranged in the body of the furnace, wherein the upper and lower graphite heaters are respectively connected with a power supply system and respectively have square wave shapes; heat conductive plates are arranged in a gap between the upper graphite heater and the lower graphite heater in a comb-shaped manner; there is a rib between adjacent heat conductive plates; there is a gap between the lower end of the upper graphite heater and the upper end of the lower graphite heater; a heat isolation plate is arranged in the gap between the lower end of the upper graphite heater and the upper end of the lower graphite heater; and the heat isolation plate stretches to a crucible. The self-controlled heating system which adopts the segmenting combined graphite heaters and a dual-power supply system enables the two graphite heaters to simultaneously work during material melting, so the silicon melting time is substantially shortened; and the power of the lower graphite heater is reduced after the ending of the material melting, monocrystal growth is carried out with the upper graphite heater as the main graphite heater and is not affected by the decrease of the bottom temperature of a heat field, and the temperature difference between the top and the bottom of a traditional heat field is reduced.

Description

technical field [0001] The invention relates to the field of monocrystalline silicon preparation, in particular to a self-controlled heating system for a single crystal furnace. Background technique [0002] At present, silicon materials still occupy a dominant position in the field of semiconductors and solar energy. With the development of science and technology, the production process of integrated circuits and solar cells has put forward new requirements for silicon materials. The growth technology of large-diameter and high-quality silicon single crystals has become a research and development hotspot in the field of semiconductor materials and solar energy. [0003] In recent years, silicon material processing technology has made many important progress. One of the most important advances in silicon crystal growth is that the 12-inch silicon single crystal growth technology has matured. The world's major silicon single crystal producers, including Shin-Etsu, SUMCO, ME...

AI Technical Summary

Problems solved by technology

The size of the COP defect is around 100nm, which already exists in 8-inch silicon wafers, but as the line width becomes smaller than 100nm, this problem becomes more prominent

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