SCR (silicon controlled rectifier) type LDMOS ESD (lateral double diffusion metal-oxide-semiconductor device electrostatic discharge) device

A device and well region technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low ESD protection level and small discharge current per unit area, and achieve high ESD protection level, adjustable trigger voltage, and electrostatic discharge current. increased effect
CN102832233AActive Publication Date: 2012-12-19PEKING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
PEKING UNIV
Publication Date
2012-12-19

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Abstract

The invention relates to the technical field electrostatic discharge protection of an integrated circuit and discloses an SCR (silicon controlled rectifier) type LDMOS ESD (lateral double diffusion metal-oxide-semiconductor device electrostatic discharge) device. A P+doping region is arranged at an N-well region of the SCR type LDMOS ESD device, so that a parasitic SCR transistor is arranged at the back side of the SCR type LDMOS ESD device. When the ESD impact happens, the parasitic SCR transistor is used as a main electrostatic discharge device, so that the unit area electrostatic discharge current of the SCR type LDMOS ESD device is increased, and a high ESD protection level is obtained; in addition, the triggering voltage of the SCR type LDMOS ESD device is determined by a drift region length of an LDMOS transistor, and the regulation of the triggering voltage is realized.
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Description

technical field

[0001] The invention relates to the technical field of electrostatic discharge protection of integrated circuits, in particular to an SCR type LDMOS ESD device. Background technique

[0002] The electrostatic discharge (ESD) phenomenon of integrated circuits is a transient process in which a large amount of charge is poured into the integrated circuit from the outside to the inside when the chip is floating. Since the internal resistance of the integrated circuit chip is very low, when the ESD phenomenon occurs, an instantaneous (taking 100-200 nanoseconds, rising time is only about 0.1-10 nanoseconds), high peak (several amperes) current will be generated, and A large amount of Joule heat is generated, which will cause the failure of the integrated circuit chip.

[0003] For high-voltage power integrated circuits, Lateral Double Diffusion Metal-Oxide-Semiconductor (LDMOS) transistors are widely used as protection devices for high-voltage input / output pins d...

Claims

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