Full-solid passive mode-locking picosecond laser

Abstract

The invention provides a full-solid passive mode-locking picosecond laser which comprises a semiconductor pumping source, a coupling system, a laser crystal, a flat concave lens, a first reflecting device, a second reflecting device, an output lens and a mode-locking element, wherein the concave plane of the flat concave lens faces towards the first reflecting device and the second reflecting device; the first reflecting device and the second reflecting device are symmetrically arranged relative to the axis of the flat concave lens; and the heavy frequency is reduced through the design of a resonant cavity; and the structure is simple and compact.

Description

technical field [0001] The invention relates to a picosecond pulse laser, in particular to an all-solid-state passive mode-locked picosecond laser. Background technique [0002] With the rapid development of ultrafast laser technology, the demand for high-energy picosecond pulsed lasers in industrial processing, laser medical treatment, military and scientific research continues to increase. Conventional CW mode-locked lasers have repetition rates in the hundreds of MHz (10 8 Hz), the corresponding single pulse energy is only nJ(10- 9 J) magnitude, which greatly limits its practical application. Therefore, the development of high-energy, high-stability, and high-efficiency all-solid-state lasers is an urgent requirement for the application of picosecond pulse technology. [0003] Among the existing mode-locking technologies, such as the paper titled Micromachining of amorphous and crystalline Ni 78 B 14 Si 8 In the literature of alloys using micro-second and pico-seco...

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Problems solved by technology

[0003] Among the existing mode-locking technologies, such as the paper titled Micromachining of amorphous and crystalline Ni 78 B 14 Si 8 In the literature of alloys using micro-second and pico-second lasers, the continuous mode-locked seed pulse output by nJ is successively passed through optical isolation, pulse selection, traveling wave amplification or regenerative amplification, and then the pulse output of hundreds of nJ~μJ level is realized. , but such a scheme is complex in structure and high in cost

In addition, as published in IEEE Jour.of Quan.Electr.(2004,40(5),p505-508.), the document titled Passive Mode Locking in a Diode-Pumped Nd:GdVO4 Laser With a Semiconductor Saturable Absorber Mirror The Z-shaped cavity and the semiconductor saturable absorber are used to realize the pulse output of hundreds of MHz and nJ level, but the output of this level limits its application range

Also in the Chinese patent application entitled "Cavity Empty All-Solid-State Picosecond Laser" (Application No. 200520000394.7), a Pockels cell was used to achieve passive mode-locking with a low repetition rate, but the cavity-emptied giant pulse oscillation pole It is easy to damage the SESAM, affecting the reliability, stability and repeatability of the output pulse train

[0004] Therefore, there is a lack of an all-solid-state passive mode-locked picosecond laser with simple structure and low repetition rate in the prior art

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