Method for growing self-stripping GaN thin film on sapphire substrate

Abstract

The invention discloses a method for growing a self-stripping GaN thin film on a sapphire substrate, which utilizes metal organic chemical vapor deposition (MOCVD) equipment to grow the self-stripping a-face GaN thin film on the sapphire substrate by serving a InGaN insertion layer and a low-temperature GaN buffer layer as weak bonding layers and comprises the following steps of: taking the sapphire substrate; leading ammonia gas into the MOCVD equipment, nitriding the sapphire substrate, and growing a nitriding layer on the sapphire substrate; leading an indium source, a gallium source and the ammonia gas into the MOCVD equipment by using carrier gas to obtain a InGaN layer on the nitriding layer; leading the gallium source and the ammonia gas into the MOCVD equipment by using the carrier gas, and growing the low-temperature GaN buffer layer; and leading the gallium source and the ammonia gas into the MOCVD equipment by using the carrier gas, and growing a GaN epitaxial layer. According to the method, the InGaN insertion layer and the low-temperature GaN buffer layer serve as the weak bonding layers, the self-stripping GaN thin film having high crystallization quality can be obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor technology, in particular to a method for growing a self-stripping a-plane GaN thin film on an r-plane sapphire substrate using an InGaN insertion layer and a low-temperature GaN buffer layer as a weak bonding layer using MOCVD equipment. Background technique [0002] Gallium nitride, as a representative of the third-generation wide-bandgap semiconductor materials, can be used to make optoelectronic devices such as light-emitting diodes, laser diodes, and high electron mobility transistors. Since group III nitrides have a hexagonal wurtzite structure, they have large spontaneous polarization and piezoelectric polarization, and there is a large polarization electric field along the c-axis, which will seriously affect the recombination efficiency of light-emitting devices, and the light-emitting wavelength is also Unstable, so there is an urgent need for growth of materials with non-polar surfaces. How...

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Problems solved by technology

[0005] In order to overcome the shortcomings of the existing high defect density of gallium nitride on the non-polar surface and the complex process of subsequent manufacturing of gallium nitride on sapphire, the present invention provides a method using an InGaN insertion layer and a low-temperature GaN buffer layer as a weak bonding layer. A method for growing a self-exfoliating a-plane gallium nitride thin film on a sapphire substrate, which can obtain a GaN single crystal thin film with good quality

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