Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof
A gallium nitride layer and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, coatings, etc., can solve problems such as product performance being difficult to meet requirements, affecting quality, dislocation inconsistency, etc.
Pending Publication Date: 2022-06-21
镓特半导体科技(上海)有限公司
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[0004] However, this method tends to cause inconsistent dislocations above the opening and above the mask (such as the lateral closure) in the early stage of growth, which affects the improvement of quality, and the product performance is difficult to meet the requirements.
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[0039] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. Preferred embodiments of the present application are shown in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application.
[0041] It will be understood that when an element or layer is referred to as being on the surface of other element...
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The invention relates to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method thereof, and the preparation method of the semiconductor structure comprises the steps: providing a substrate, forming a patterned mask layer on the surface of the substrate, and enabling the interior of the patterned mask layer to be provided with an opening; placing the substrate in hydride vapor phase epitaxy equipment; a gallium nitride seed crystal layer is formed in the opening and on the surface, away from the substrate, of the patterned mask layer, the gallium nitride seed crystal layer comprises a first area located in the opening and a second area located on the surface of the patterned mask layer, and the dislocation density in the first area is larger than that in the second area; etching the gallium nitride seed crystal layer, and removing all or part of the gallium nitride seed crystal layer in the first region; and introducing doping gas into the hydride vapor phase epitaxy equipment to form the doped thick film gallium nitride layer. According to the preparation method of the semiconductor structure, the crystal quality of the doped thick-film gallium nitride layer can be improved, the subsequent automatic stripping of the doped thick-film gallium nitride layer is facilitated, the series resistance of a device is reduced, and the tunneling current is increased.
Description
technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method thereof. Background technique [0002] With the development of science and technology, there are more and more application fields of semiconductor devices with excellent performance such as high frequency, high efficiency and high power. The third-generation semiconductor materials represented by gallium nitride (GaN) have excellent physical and chemical properties such as wide band gap, high thermal conductivity, and corrosion resistance, and have broad application prospects in optoelectronic devices and microelectronic devices. [0003] At present, the method of hydride vapor phase epitaxy (HVPE) is mainly used to prepare single crystal gallium nitride thick films. HVPE is used to prepare single crystal gallium nitride in hydride vapor phase epitaxy equipment. In t...
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Login to View More IPC IPC(8): H01L21/02H01L21/683C23C16/01C23C16/04C23C16/30
CPCH01L21/0243H01L21/02458H01L21/0254H01L21/02634H01L21/02664H01L21/6835C23C16/01C23C16/042C23C16/303H01L2221/68345H01L2221/68386
Inventor 罗晓菊王颖慧焦顺平
Owner 镓特半导体科技(上海)有限公司