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Method for hindering the growth of semi-polar surface gallium nitride and preparing self-exfoliating gallium nitride crystal

A semi-polar surface, gallium nitride technology, applied in the field of optoelectronics, can solve the problems of hindering the merger and growth of self-exfoliating gallium nitride crystals, unfavorable promotion and use, and many instruments and equipment, achieving low cost, strong practicability, and convenient operation Effect

Active Publication Date: 2022-03-11
QILU UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods have played a certain role in generating high-quality GaN single crystals, but the process is more complicated and requires more auxiliary equipment, which is not conducive to popularization and use. The method of stripping gallium nitride crystal is a good solution to this problem

Method used

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  • Method for hindering the growth of semi-polar surface gallium nitride and preparing self-exfoliating gallium nitride crystal
  • Method for hindering the growth of semi-polar surface gallium nitride and preparing self-exfoliating gallium nitride crystal
  • Method for hindering the growth of semi-polar surface gallium nitride and preparing self-exfoliating gallium nitride crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) Etching GaN by hydrothermal etching to prepare a GaN substrate with an inverted hexagonal pyramid structure and exposed semipolar planes {10-11} or {11-22};

[0032] (2) Choose high-purity copper wire with a diameter of 0.1mm as the connecting wire, first stick the copper wire to the surface of the GaN substrate with silver glue, and then transfer the substrate to an oven at 80-150°C for curing until the silver glue is completely solidified can;

[0033] (3) The zinc chloride that takes by weighing 13.630g is dissolved in the deionized water of 100ml, obtains the ZnCl of concentration 1mol / L 2 The solution is used as the metal salt solution to be electrolyzed;

[0034] (4) Select PSW 160-14.4 as the DC power supply, the platinum electrode as the positive electrode of the electrolysis, and the GaN substrate fixed with wires as the negative electrode of the electrode. 2 solution;

[0035] (5) Control the DC voltage to 5V, the corresponding current to 0.3A, and the ...

Embodiment 2

[0040] As described in Example 1, the difference is that in step (1), concentrated phosphoric acid is used to etch to prepare a GaN substrate with an inverted hexagonal pyramid structure and exposed semipolar planes {10-11} or {11-22};

Embodiment 3

[0042] As described in Example 1, the difference is that step (1) uses pyrolysis to prepare a GaN substrate with an inverted hexagonal pyramid structure and exposed semipolar planes {10-11} or {11-22};

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Abstract

The invention discloses a method for hindering the growth of gallium nitride on a semipolar surface and preparing a self-exfoliating gallium nitride crystal, comprising the following steps: preparing a GaN crystal having an inverted hexagonal pyramid structure and exposing a semipolar surface; reducible The metal salt solution or metal salt melt is electrolytically reduced on the non-polar surface of GaN to obtain the corresponding metal; and in the process of GaN crystal growth, the electrodeposited metal hinders the growth of GaN on the non-polar surface, resulting in voids, which are obtained due to stress during the cooling process. Self-exfoliated GaN crystals. By depositing metal on the semipolar surface, the barrier structure is only formed on the semipolar surface of the sample. With the help of the principle of vacancy-assisted separation, the processed substrate prepared in the later stage of growing GaN bulk single crystal helps to alleviate the crystallization. stress and achieve crystal self-stripping.

Description

technical field [0001] The invention relates to a method for hindering the semipolar plane of a gallium nitride seed layer and growing a self-stripping gallium nitride (GaN) crystal. The method is simple, convenient, direct and easy to operate, and can prepare a processing substrate used for growing self-stripping GaN crystals, and belongs to the field of optoelectronic technology. Background technique [0002] GaN is a typical representative of the third-generation semiconductor, and has a wide range of applications in high-frequency and high-power devices. However, most of the currently used GaN-based devices are fabricated by means of heteroepitaxy, which has a high dislocation density in GaN crystals due to the lattice and thermal mismatch between GaN and the substrate. and residual stress seriously affect the performance of GaN-based devices. In order to reduce dislocation and stress in GaN single crystal, pretreatment of substrate is the key technology for growing hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/20C30B25/18C25D21/12C30B29/40C25D7/12C25D3/22
CPCC30B25/20C30B25/186C30B29/406C25D7/12C25D21/12C25D3/22
Inventor 邵永亮张保国胡海啸郝霄鹏吴拥中吕洪
Owner QILU UNIV OF TECH