Multi-chip flip, etching-after-packaging and pad exposed packaging structure and manufacturing method thereof

Abstract

The invention relates to a multi-chip flip, etching-after-packaging and pad exposed packaging structure and a manufacturing method thereof. The structure comprises pads (1), pins (2) and a plurality of chips (3). The plurality of the chips (3) are arranged on the right sides of the pads (1) and the pins (2) in an inverted mode. Bottom filling glue (14) is arranged between the bottoms of the plurality of the chips (3) and the right sides of the pads (1) and the pins (2). Molding compounds (4) are packaged in areas on the peripheries of the pads (1), between the pads (1) and the pins (2), among the pins (2) and outside the plurality of the chips (3). Holes (5) are opened on the surfaces of the molding compounds (4) on the lower portions of pads (1) and the pins (2), and metal balls (7) are arranged in the holes (5). The multi-chip flip, etching-after-packaging and pad exposed packaging structure and the manufacturing method thereof have the advantages of reducing manufacturing costs, improving safety and reliability of packaging bodies, reducing environmental pollution, and being capable of designing and manufacturing high-density lines.

Description

technical field [0001] The invention relates to a multi-chip flip-chip package first and then etch the base island to expose the package structure and a manufacturing method thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 28 , take a substrate made of glass fiber material, [0004] Step two, see Figure 29 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 30 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 31 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 32 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 33 , coated with a photoresist fi...

AI Technical Summary

Problems solved by technology

[0019]3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the reliability and safety ability or is the level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 40 , the best production capacity is that the etching gap is approximately equal to the thickness of the etched object), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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