Multi-chip reversely-arranged etched-encapsulated base island-buried encapsulating structure and manufacturing method thereof

Abstract

The invention relates to a multi-chip reversely-arranged etched-encapsulated base island-buried encapsulating structure and a manufacturing method thereof. The structure comprises a base island (1), a pin (2) and a plurality of chips (3), wherein the chips (3) are reversely arranged on the front faces of the base island and the pin; bottom filling adhesives (14) are arranged between the bottoms of the chips and the front faces of the base island and the pin; plastic sealing materials (4) are enveloped in a region on the periphery of the base island, a region between the base island and the pin, a region between adjacent pins, regions on the upper parts of the base island and the pin, regions on the lower parts of the base island and the pin and the peripheries of the chips; the plastic sealing materials on the back face of the pin are provided with small holes (5); and metal balls (7) are arranged in the small holes (5), and are contacted with the back face of the pins. The multi-chip reversely-arranged etched-encapsulated base island-buried encapsulating structure has the beneficial effects that the manufacturing cost is lowered, the safety and the reliability of an encapsulating body are enhanced, environmental pollution is lowered, and design and manufacturing of a high-density circuit are realized truly.

Description

technical field [0001] The invention relates to a multi-chip flip-chip etching first package base island embedded package structure and a manufacturing method thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 28 , take a substrate made of glass fiber material, [0004] Step two, see Figure 29 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 30 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 31 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 32 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 33 , coated with a photoresist film on the surfa...

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Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object to be etched, see Figure 40 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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