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IGBT (Insulated Gate Bipolar Transistor) drive circuit

A driving circuit and driving chip technology, which is applied in the direction of electrical components, output power conversion devices, etc., can solve the problems of small driving current and large conduction voltage drop of NPN triode, so as to reduce switching loss, avoid amplitude changes, The effect of speeding up the switching speed

Active Publication Date: 2014-09-03
菲仕绿能科技(北京)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems that the output drive voltage amplitude is slightly smaller than the theoretically calculated value, the conduction voltage drop of the NPN transistor is relatively large, and the drive current is too small in the current commonly used IGBT drive circuit.

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  • IGBT (Insulated Gate Bipolar Transistor) drive circuit
  • IGBT (Insulated Gate Bipolar Transistor) drive circuit

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Embodiment Construction

[0011] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0012] IGBT driving circuit of the present invention such as figure 2 shown. The driving circuit of the present invention includes: an intelligent driving chip U1, a driving input power source V2, a voltage regulator V1, a voltage divider circuit, a charging resistor R4, a discharging resistor R5, an NPN transistor Q1, and a PNP transistor Q2.

[0013] The driving input power V2 is connected to the input power port Vc of the intelligent driving chip U1, and the driving input power V2 is also used as the input power of the voltage stabilizing source V1. The output voltage of the voltage stabilizing source V1 is divided through a voltage dividing circuit composed of a resistor R3 and a voltage stabilizing tube D2 connected in series. The first capacitor C2 is connected in parallel with the resistor R3; the second capacitor C3 is connected in p...

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Abstract

An IGBT driving circuit, the driving input power (V2) is connected to the input power port (Vc) of the intelligent driving chip (U1), and the driving input power (V2) is also used as the input power of the voltage regulator (V1). The output voltage of the voltage regulator (V1) is divided by a voltage divider circuit composed of a resistor (R3) and a voltage regulator tube (D2) connected in series. The first capacitor (C2) is connected in parallel with the resistor (R3), and the second capacitor (C3) is connected in parallel with the regulator tube (D2). The positive pole of the first capacitor (C2) is connected to one end of the charging resistor (R4), and the other end of the charging resistor (R4) is connected to the collector of the NPN transistor (Q1); the emitter of the NPN transistor (Q1) and the PNP transistor (Q2) ) is connected to the gate (G) of the IGBT after the emitter is connected; the collector of the PNP transistor (Q2) is connected to one end of the discharge resistor (R5), and the other end of the discharge resistor (R5) is connected to the second capacitor (C3) Negative connection.

Description

technical field [0001] The invention relates to an IGBT drive circuit. Background technique [0002] With the rapid development of new energy industries such as electric vehicles, solar power, and wind power, the insulated gate bipolar transistor (IGBT) plays an important role as the core component of its conversion, and the prerequisite for high-power IGBT to work reliably must have high-performance The IGBT drive circuit satisfies the characteristics of large charge and discharge current at the moment of IGBT turn-on, fast turn-on speed, and low IGBT loss. [0003] Currently commonly used drive circuits such as figure 1 shown. Among them, U1 is the driver chip, such as HCPL-316J or ACPL-38JT, HCPL-312J, etc., to realize the connection between the weak current control signal and the push-pull circuit. The output of the driver chip is Vout, and the external connection is composed of NPN transistor Q1 and PNP transistor Q2. push-pull circuit. The emitter of the NPN transi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
Inventor 苏伟钟玉林温旭辉
Owner 菲仕绿能科技(北京)有限公司