Method for manufacturing BJT (bipolar junction transistor) and BiCMOS (bipolar complementary metal oxide semiconductor)

Abstract

The invention discloses a method for manufacturing a BJT (bipolar junction transistor) and BiCMOS (bipolar complementary metal oxide semiconductor), wherein the BJT is provided with a polycrystalline silicon emitter, and the polycrystalline silicon emitter is manufactured by adopting the following two-step etching method: dry method etching is adopted in the first step, silicon dioxide is used as a retention layer, and the surface of monocrystalline silicon cannot be damaged; wet method etching is adopted in the second step, Alpha-type polycrystalline is used as a barrier layer, the crosswise corrosion volume to the silicon dioxide in the wet method etching is reduced, and a better window form is obtained. When an emitter region is used for polycrystalline ion injection and diffusion, better surface concentration can be obtained, and the low-current degradation of the BJT is improved.

Description

technical field [0001] The invention relates to a method for manufacturing a bipolar junction transistor and a bipolar-complementary metal oxide semiconductor hybrid structure, in particular to a bipolar junction transistor with a polysilicon emitter and a bipolar-complementary metal oxide semiconductor hybrid structure production method. Background technique [0002] Bipolar and complementary metal-oxide-semiconductor (BiCMOS) is an integrated circuit composed of a bipolar gate circuit and a complementary metal-oxide semiconductor (CMOS) gate circuit. The feature is that the bipolar (Bipolar) process is compatible with the CMOS process, and the bipolar circuit and the CMOS circuit are integrated in a certain circuit form on the same chip, and it has the characteristics of high density, low power consumption, and high-speed and large driving capability. . But the disadvantage is that its manufacturing process is also complicated, the cost is relatively high, and the device...

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Problems solved by technology

[0006] 2. The emitter junction formed together with the implantation of the source and drain of the CMOS tube and its annealing is easily limited when adjusting the device parameters, and also affects the CMOS device;

[0007] 3. Direct chemical vapor deposition of polysilicon after dry etching SCl cleaning. Due to the relatively large ion damage during dry etching, the surface shape of the single crystal in the emission area is poor, the surface of the emission area is seriously recombined, and the small current amplification characteristics of BJT are relatively poor.

[0008] Therefore, the current polysilicon emitter process is relatively immature, the effect is not obvious, the process is unstable, and its maximum advantages cannot be fully utilized.

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