Driving matrix type flat panel display device, thin film transistor and manufacturing method of driving matrix type flat panel display device and thin film transistor
A technology for thin film transistors and a manufacturing method, applied in the field of active matrix flat display devices, can solve the problems of OxideTFT characteristic deterioration, oxide semiconductor layer damage, oxide semiconductor layer damage, etc., to protect the oxide semiconductor layer and ensure stability. , the effect of preventing damage
Inactive Publication Date: 2013-02-13
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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[0003] However, for the oxide TFT of BCE type, its oxide semiconductor layer is easily damaged by subsequent processes, for example, when etching the source and drain electrodes or depositing a protective layer, the oxide semiconductor layer is easily damaged, resulting in deterioration of the characteristics of the oxide TFT and unstable
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[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0024] Please refer to figure 1 and figure 2 , figure 1 It is a flowchart of a method for manufacturing a thin film transistor according to the first embodiment of the present invention, figure 2 yes figure 1 The process diagram corresponding to the manufacturing method of the thin film transistor shown. The manufacturing method of the thin film transistor of the present invention comprises the following steps:
[0025] Step S1: disposing the gate 101 on the substrate 100;
[0026] In step S1, a substrate 100 is firstly provided, and a gate 101 is provided on the substrate 100. The gate 101 is used as a control electrode of the TFT to control the TFT to turn on after receiving an external signal.
[0027] Step S2: disposing a first insulating layer 102 on the gate 101;
[0028] In step S2 , a first insulating layer 102 is provided on the gate...
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The invention discloses a driving matrix type flat panel display device, a thin film transistor and a manufacturing method of the driving matrix type flat panel display device and the thin film transistor. The manufacturing method comprises the following steps of: arranging a first insulating layer on a grid; sequentially arranging an oxide semiconductor layer and buffer layers on the first insulating layer in a laminating manner; arranging a source electrode and a drain electrode on the oxide semiconductor layer and the buffer layers; performing plasma treatment or thermal treatment containing oxygen atmosphere on the buffer layer which is not directly contacted with the source electrode and the drain electrode, so that the oxygen content of the buffer layer which is not directly contacted with the source electrode and the drain electrode is higher than that of the buffer layer which is directly contacted with the source electrode and the drain electrode. Through the mode, the oxide semiconductor layer can be prevented from being damaged by a subsequent manufacture procedure, thus the stability of the thin film transistor is guaranteed, and the display the display quality of the driving matrix type flat panel display device is guaranteed.
Description
technical field [0001] The invention relates to the field of display technology, in particular to an active matrix flat display device, a thin film transistor and a manufacturing method thereof. Background technique [0002] Currently, the application of Oxide TFT (Oxide Thin Film Transistor) has been realized. Oxide TFT technology is to partially replace the silicon semiconductor material originally used in a-Si TFT with an oxide semiconductor such as IGZO (Indium Gallium Zinc Oxide, Indium Gallium Zinc Oxide) to form a TFT semiconductor layer. At present, Oxide TFT mainly has two structures: BCE type (Back Channel Etched, back channel etching type) and ES type (Etch Stopper, etch stop type), among which BCE type Oxide TFT is compared with ES type Oxide TFT. It has the advantages of simpler process and higher channel width to length ratio. [0003] However, for the oxide TFT of BCE type, its oxide semiconductor layer is easily damaged by subsequent processes, for example,...
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IPC IPC(8): H01L21/336H01L21/28H01L29/786H01L29/417G09F9/33
CPCH01L29/66765H01L29/7869H01L29/263H01L29/78669H01L27/1225
Inventor 江政隆陈柏林
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD