Nitride semiconductor light-emitting device
A technology for nitride semiconductors and light-emitting elements, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as the decline of the crystal quality of the well layer and the rise of the working voltage of the nitride semiconductor light-emitting element, so as to prevent the rise of the working voltage and prevent light emission. Reduced efficiency and good electrical efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0105] First, a wafer composed of a sapphire substrate 3 having a diameter of 100 mm with uneven processing on the upper surface is prepared, and a buffer layer 5 composed of AlN is formed on the upper surface by sputtering.
[0106] Next, the wafer is loaded into the first MOCVD device, and the MOCVD method uses TMG (trimethyl gallium) and NH 3 As the raw material gas, the base layer 7 composed of undoped GaN is crystal grown, and then SiH is added 4 As the impurity gas, the n-type nitride semiconductor layer 9 made of n-type GaN is crystal-grown. At this time, the thickness of the base layer 7 is 4 μm, the thickness of the n-type nitride semiconductor layer 9 is 3 μm, and the n-type doping concentration of the n-type nitride semiconductor layer 9 is 6×10 18 cm -3 .
[0107] The wafer taken out from the first MOCVD apparatus was loaded into the second MOCVD apparatus, and the temperature of the wafer was set at 1050° C. to cause the n-type nitride semiconductor layer 10 to undergo ...
Embodiment 2
[0123] In Example 2, the wafer diameter (the diameter of the substrate 3) was 150 mm, and another MOCVD apparatus different from that in Example 1 was used to make the thickness of the lower well layer 13B of the lower light-emitting layer 13 3.25 nm, and the lower barrier layer 13A The thickness is 6.25nm. In addition, the thickness of the upper well layer 15B of the upper light-emitting layer 15 is 3.25 nm, and the thickness of the upper barrier layer 15A is 4 nm.
[0124] Since a MOVCD different from Example 1 is used, it cannot be directly compared. However, in this example, a 30mA drive current is also used to obtain a light output power of 45mW, which is compared with the existing structure (in the lower light-emitting layer 13 and the upper light-emitting layer). In 15, the barrier layer thickness is the same) compared to achieve an increase of about 1.5mW of optical output power.
Embodiment 3
[0126] In Example 3, it is the same as in Example 1 above except that the number of layers of the lower well layer 13B of the lower light-emitting layer 13 is increased. Hereinafter, points different from the above-mentioned Example 1 are shown.
[0127] The number of layers of the lower well layer 13B of the lower light-emitting layer 13 is six. Whether to perform n-type doping on the lower well layer 13B and the lower barrier layer 13A is the same as in the first embodiment.
[0128] The number of layers of the upper well layer 15B of the upper light-emitting layer 15 is three.
[0129] The result obtained is approximately the same as Example 1 within the error range.
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More