Isolation filling manufacture method in GaN-based high voltage light-emitting diode (LED) manufacture process

Abstract

The invention discloses an isolation filling manufacture method in gallium nitride (GaN)-based high voltage light-emitting diode (LED) manufacture process. The method includes conducting first N type gallium nitride layer etching to form a groove structure and form a first isolation insulation layer in the groove structure after forming the N type gallium nitride layer on a lining, forming a P type gallium nitride layer in the manufacture process of a light-emitting diode tube, conducting second groove etching to form a structure reaching a first isolation insulation layer and forming a second isolation insulation layer above the first isolation insulation layer. The method greatly reduces difficulty of forming an isolation filling structure, provides a smooth climbing structure for metallization interconnection of a follow-up chip electrode, simultaneously improves covering quality of the isolation insulation layer on the lateral face of the groove, and improves reliability and yield of a GaN-based high voltage LED.

Description

technical field [0001] The invention relates to a light-emitting diode (LED) device manufacturing technology, in particular to an isolation filling manufacturing method in a gallium nitride (GaN)-based high-voltage light-emitting diode (LED) manufacturing process. Background technique [0002] Gallium nitride (GaN)-based high-voltage light-emitting diodes (LEDs) are semiconductor devices that use gallium nitride semiconductor materials to form a PN junction to emit light. Because of its advantages of high efficiency, long service life, and low energy consumption, GaN-based high-voltage light-emitting diodes have good industrial application prospects. [0003] In the manufacturing process of gallium nitride-based high-voltage light-emitting diodes, it is necessary to use a trench structure filled with an isolation insulating layer to isolate adjacent chips. figure 1 It is a flow chart of the isolation and filling manufacturing method in the existing gallium nitride-based hig...

AI Technical Summary

Problems solved by technology

[0008] The existing isolation and filling method is to perform trench etching and isolation insulating layer filling after the epitaxial structure is completely formed. The trench etching reaches more than 5 microns, and the thickness of the isolation insulating layer is greater than 4 microns. The selective ratio of etching to mask is high, and the low selec

Images