Method for manufacturing trench power semiconductor element with source trench
A technology of power semiconductors and manufacturing methods, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of limiting separation distance, affecting on-resistance, affecting the density of trenched power semiconductor components, etc. Effect of on-resistance and distance reduction
Inactive Publication Date: 2015-08-19
SUPER GROUP SEMICON
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Problems solved by technology
The fabrication of these heavily doped regions 18 and source trenches 14 will limit the distance between adjacent gate trenches 12, which will affect the density of the trenched power semiconductor elements, thereby affecting their on-resistance.
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[0059] Figure 2A to Figure 2H A first embodiment of the method for manufacturing a trench-type power semiconductor element having source trenches according to the present invention is shown. First, if Figure 2A As shown, an N-type epitaxial layer 110 (hereinafter referred to as epitaxial plate) is formed on an N-type substrate 100 to form a base. Subsequently, a plurality of gate trenches 120 are formed in the epitaxial layer 110 by means of photolithography etching. Next, a first dielectric layer 130 is fully formed to cover the inner surface of the gate trench 120 . Then, a first polysilicon structure 140 is formed in the gate trench 120 .
[0060] Then, if Figure 2C As shown, P-type dopants are fully implanted by ion implantation steps to form P-type body regions 150 between adjacent gate trenches 120 . Then, another ion implantation step is used to fully implant N-type dopants to form the upper part of the N-type source doped region 160 on the P-type body region 15...
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Disclosed is a manufacturing method of trench power semiconductor elements with source-electrode trenches. The manufacturing method includes firstly, forming at least two grid-electrode trenches in a substrate; secondly, forming a dielectric layer and a polycrystalline silicon structure in each grid-electrode trench sequentially; thirdly, forming at least one source-electrode trench between each two adjacent grid-electrode trenches; fourthly, forming a dielectric layer and a second polycrystalline silicon structure in each source-electrode trench sequentially and enabling the second polycrystalline silicon structure on the lower portion of the corresponding source-electrode trench; fifthly, removing part of second dielectric layer to allow a source-electrode area and a main area to be exposed; and sixthly, filling a conductive structure in the source-electrode trenches so as to electrically connect the second polycrystalline silicon structures, the main area and the source-electrode area. By the manufacturing method of trench power semiconductor elements with the source-electrode trenches, distance between the adjacent grid-electrode trenches can be reduced effectively and conduction resistance can be decreased.
Description
technical field [0001] The invention relates to a method for manufacturing a trench type power semiconductor element, in particular to a method for manufacturing a trench type power semiconductor element with source trenches. Background technique [0002] The performance of on-resistance (Rds(on)) is an important parameter for evaluating trench power semiconductor components. The improvement of on-resistance helps to reduce the conductive loss of circuit operation. However, for the trenched power semiconductor device, the on-resistance is also limited by the withstand voltage (ie, the breakdown voltage) of the trenched power semiconductor device. That is, if the withstand voltage of the trench power semiconductor device is increased by increasing the thickness and resistance of the epitaxial layer, it will also cause an increase in the conduction resistance and increase the conduction loss. [0003] In order to improve this problem, such as figure 1 As shown, US Patent Pu...
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IPC IPC(8): H01L21/336H01L21/28
Inventor 叶俊莹许修文
Owner SUPER GROUP SEMICON