Preparation method of one-dimensional silicon nano material with controllable appearance
A silicon nanometer and morphology technology, applied in the fields of nanoelectronics and semiconductor microelectronics, can solve the problems that products are easy to be polluted and damaged products, etc.
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[0014] (1) The mixed powder of SiO and Si (the mass ratio of SiO and Si powder is 1.2~1.8) is used as the initial raw material. Argon is used as the carrier gas, and the air pressure and flow rate are controlled at 10-30 Torr and 60-80 sccm respectively. The heating rate of the high temperature tube furnace is 15~25°C / min. Constant temperature at 1300°C for 3h. Silicon nanowires were grown on the quartz boat substrate, and the diameter of the nanowires was ~15nm.
[0015] (2) The mixed powder of SiO and Si (the mass ratio of SiO and Si powder is 1.2~1.8), and the lanthanum powder with a mass ratio of ~3% are used as the initial raw materials. Argon is used as the carrier gas, the air pressure is controlled at 10-30 Torr, and the flow rate is 60-80 sccm. The heating rate of the high temperature tube furnace is 15~25°C / min. Constant temperature at 1300°C for 3h. Silicon nanotubes are formed on the quartz boat substrate. The outer diameter of the nanotubes is ~65nm and the i...
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