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Preparation method of one-dimensional silicon nano material with controllable appearance

A silicon nanometer and morphology technology, applied in the fields of nanoelectronics and semiconductor microelectronics, can solve the problems that products are easy to be polluted and damaged products, etc.

Inactive Publication Date: 2013-03-20
FUDAN UNIV
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  • Abstract
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Problems solved by technology

The disadvantage of the template method is that the product is severely damaged during the removal of the template, and the product is easily contaminated due to interdiffusion between the template and the target product

Method used

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  • Preparation method of one-dimensional silicon nano material with controllable appearance
  • Preparation method of one-dimensional silicon nano material with controllable appearance
  • Preparation method of one-dimensional silicon nano material with controllable appearance

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Embodiment Construction

[0014] (1) The mixed powder of SiO and Si (the mass ratio of SiO and Si powder is 1.2~1.8) is used as the initial raw material. Argon is used as the carrier gas, and the air pressure and flow rate are controlled at 10-30 Torr and 60-80 sccm respectively. The heating rate of the high temperature tube furnace is 15~25°C / min. Constant temperature at 1300°C for 3h. Silicon nanowires were grown on the quartz boat substrate, and the diameter of the nanowires was ~15nm.

[0015] (2) The mixed powder of SiO and Si (the mass ratio of SiO and Si powder is 1.2~1.8), and the lanthanum powder with a mass ratio of ~3% are used as the initial raw materials. Argon is used as the carrier gas, the air pressure is controlled at 10-30 Torr, and the flow rate is 60-80 sccm. The heating rate of the high temperature tube furnace is 15~25°C / min. Constant temperature at 1300°C for 3h. Silicon nanotubes are formed on the quartz boat substrate. The outer diameter of the nanotubes is ~65nm and the i...

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Abstract

The invention belongs to the technical field of semiconductor microelectronics and nanoelectronics, and in particular relates to a preparation method of a one-dimensional silicon nano-material with a controllable appearance. The method comprises the steps of: by taking mixed powder of silicon (Si) and silicon monoxide (SiO) as raw materials, adjusting the appearance of the one-dimensional nano-material of silicon by adding a rare earth element lanthanum (La) as a special gasification regulator under the conditions of high temperature and low barometric pressure. The appearance of the nano material prepared by the method mainly comprises a silicon nanowire, a silicon nanotube and a silicon nano chain. Three silicon nano materials with different appearances can be obtained by adjusting the ratio of lanthanum powder in the mixed powder. The modulation method is simple in process, simple in operation, and strong in compatibility with current equipment; the cost does not need to be greatly increased, and the preparation method can meet the basic requirements of modern industry.

Description

technical field [0001] The invention belongs to the technical field of semiconductor microelectronics and nanoelectronics, and in particular relates to a method for controlling the morphology of a one-dimensional nanometer material of silicon. Background technique [0002] One-dimensional nanostructures of silicon include silicon nanowires, nanotubes, nanochains, etc. One-dimensional silicon nanomaterials not only have the stable semiconductor properties of bulk silicon, but also exhibit more excellent chemical and physical properties due to their reaching the nanoscale, so they have broad application prospects in semiconductor devices such as solar cells and field effect transistors. . At present, there are many methods for the growth of silicon nanowires, such as laser ablation, chemical vapor deposition (CVD) and thermal evaporation. Silicon nanotubes are more difficult to obtain than silicon nanowires. This is due to the fact that Si atoms tend to have three p orbital...

Claims

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Application Information

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IPC IPC(8): C01B33/021B82Y30/00
Inventor 江素华张文文
Owner FUDAN UNIV
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