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Three-junction cascade solar battery and manufacturing method thereof

A technology of a solar cell and a manufacturing method, applied in the field of solar cells, can solve the problems of low photocurrent density and limit the efficiency of three-junction solar cells, and achieve the effects of improving conversion efficiency, improving photocurrent density, and realizing absorption

Inactive Publication Date: 2013-03-20
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

In the lattice-matched triple-junction GaInP / InGaAs / Ge solar cells, the photocurrent density of the middle InGaAs cell is the lowest compared to the other two junctions. Therefore, this theoretically limits the lattice-matched triple-junction solar cells. s efficiency

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  • Three-junction cascade solar battery and manufacturing method thereof

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Embodiment Construction

[0023] Based on the success of the structural design of traditional triple-junction matching solar cells, if the photocurrent density of intermediate junction cells can be increased, it will definitely play a very good role in improving the efficiency of triple-junction solar cells. Quantum dots have been shown to act as very good intermediate-energy bands to absorb low-energy photons below the bandgap of (In)GaAs. On the basis of the traditional matched-grown triple-junction (Al)GaInP / InGaAs / Ge solar cell, a layer of InGaAs quantum dots is grown in the InGaAs cell material, and the photocurrent generated by the absorption of low-energy photons by the quantum dots is used to control the InGaAs cell part. The contribution of these materials will result in a higher photocurrent density than conventional triple-junction cells and higher photoelectric conversion efficiency.

[0024] In view of this, an embodiment of the present invention discloses a triple-junction cascaded solar ...

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Abstract

The invention discloses a three-junction cascade solar battery which comprises a Ge battery of a bottom layer, an InGaAs battery of a middle layer and an (Al) GaInP battery of a top layer. In(Ga)As quantum dots are embedded in the InGaAs battery of the middle layer. The invention further discloses a manufacturing method of the three-junction cascade solar battery. The In(Ga)As quantum dots are embedded in the three-junction (Al) GaInP / InGaAs / Ge batteries in traditional lattice matching, adsorption of low-energy photons and separation of carriers are performed by quantum dot materials, the interlayer coupling of the quantum dots is fully utilized, the physical mechanism that the density of the quantum dots influences quantum efficiency and solar battery photoelectric conversion efficiency is utilized to achieve effective combination of a traditional multijunction structure and a novel quantum dot structure, band gap design and regulation of a three-junction battery in photocurrent matching are achieved, adsorption of sunlight low-energy spectra is achieved to the largest extent, and accordingly conversion efficiency of the three-junction cascade solar battery is improved.

Description

technical field [0001] The present application belongs to the field of solar cells, and in particular relates to a triple-junction cascaded solar cell and a manufacturing method thereof. Background technique [0002] Stimulated by the energy crisis triggered in the 1970s and driven by the demand for space vehicle energy systems, the field of photovoltaic technology has continuously made breakthroughs. Crystalline silicon solar cells, amorphous silicon solar cells, amorphous silicon thin-film solar cells, III-V compound semiconductor solar cells, II-VI compound semiconductor polycrystalline thin-film solar cells, etc. More and more solar cell technologies are maturing . The continuous improvement of photoelectric conversion efficiency and the continuous reduction of manufacturing costs have enabled photovoltaic technology to be widely used in space and on the ground. [0003] Looking back at the development of photovoltaic technology in the past 10 years, the multi-junction...

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Application Information

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IPC IPC(8): H01L31/0687H01L31/0352H01L31/18
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 代盼陆书龙杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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