Polishing method applied to CdS wafer
A wafer and polishing pad technology, applied in polishing compositions containing abrasives, grinding devices, grinding machine tools, etc., can solve the problems of poor polishing effect and large surface roughness of single crystal, achieve smooth surface, improve quality, Damage reduction effect
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Embodiment 1
[0025] A kind of polishing method for CdS wafer that the embodiment of the present invention provides, see figure 1 , the method includes:
[0026] S101. Roughly grind the CdS wafer on a polyurethane polishing pad, and then perform fine grinding, wherein the abrasive used for rough grinding and fine grinding is 5-30wt%, the grinding fluid is 0.1-0.50wt%, and the grinding aid is 0.1-0.50wt%. %, the balance is deionized water, the flow rate of the grinding liquid is 1~50ml / min, and the grinding pressure is 50~150g / cm 2 , the speed is 40~80r / min, the particle size of the abrasive liquid used for coarse grinding is W7, and the particle size of the abrasive liquid used for fine grinding is W1.5;
[0027] S102. Carry out chemical mechanical polishing on the synthetic leather polishing pad of the CdS wafer after fine grinding, the particle size of the polishing liquid is 20-60nm, the pH value is 9.5, and the polishing pressure is 60-120g / czm 2 , rotating speed 60~100r / min, describe...
Embodiment 2
[0031] The embodiment of the present invention provides another polishing method for a CdS wafer, comprising:
[0032] The CdS wafer is roughly ground on a polyurethane polishing pad, and then finely ground, wherein, the abrasive used for rough grinding and fine grinding is 5~30wt%, the grinding fluid is 0.1~0.50wt%, and the grinding fluid is 0.1~0.50wt%. The balance is deionized water, the flow rate of the grinding liquid is 1~50ml / min, and the grinding pressure is 50~150g / cm 2 , the speed is 40~80r / min, the particle size of the abrasive liquid used for coarse grinding is W7, and the particle size of the abrasive liquid used for fine grinding is W1.5;
[0033] Wherein, the polyurethane polishing pad in the embodiment of the present invention is LP-66 type.
[0034] The abrasive in the embodiment of the present invention comprises alumina, or a mixture of alumina and boron carbide, or a mixture of alumina and silicon carbide, or a mixture of alumina, boron carbide and silicon...
Embodiment 3
[0044] A kind of polishing method for CdS wafer that the embodiment of the present invention provides, see figure 2 , the method includes:
[0045] S201, heating the ceramic plate to 80 degrees, then evenly spreading the liquid wax on the ceramic plate, and then fixing the CdS wafer on the ceramic plate;
[0046]S202, placing the ceramic plate fixed with the CdS wafer on the polyurethane polishing pad of the grinder for rough grinding, the composition of the grinding liquid used is: aluminum oxide and silicon carbide account for 20wt% altogether, and the weight ratio of aluminum oxide and silicon carbide is greater than 4:1, 0.2wt% grinding fluid, 0.3wt% grinding aid, the balance is deionized water, the flow rate of grinding fluid is 40ml / min, and the grinding pressure is 100g / cm 2 , the rotating speed is 60r / min, and the particle size of the abrasive liquid used in coarse grinding is W7;
[0047] Among them, the abrasive liquid is dripped into the ceramic ring on the polis...
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Abstract
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