Silicon carbide (SiC) Schottky diode and method for manufacturing same

Abstract

The invention discloses a SiC Schottky diode and a method for manufacturing the same. The SiC Schottky diode comprises an N <+>-SiC substrate, an N<->-SiC epitaxial layer, Schottky contact, a P<->-SiC area ring, n Schottky metal rings, a SiO2 passivation layer, field plates and N-type ohmic contact. The N<->-SiC epitaxial layer is formed on the N <+>-SiC substrate; the Schottky contact formed on the N<->-SiC epitaxial layer; the P<->-SiC area ring is formed at the Schottky contact edge and serves a junction termination extension (JTE) area; n Schottky metal rings is formed on the P<->-SiC area ring, wherein n>=2; the SiO2 passivation layer is formed among the Schottky metal rings; field plates are formed on the SiO2 passivation layer; and the N-type ohmic contact is formed on the back surface of the N <+>-SiC substrate. According to the SiC Schottky diode and the method for manufacturing the same, when the JTE effective concentration of a single area is lower than an optimal concentration, the sensitivity degree of an apparatus breakdown voltage to the JTE concentration is reduced, and simultaneously, effects of interface charges on the apparatus breakdown voltage are prevented and the improvement of the apparatus performance is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a SiC Schottky diode with a floating metal ring and a field plate junction terminal extension structure and a manufacturing method thereof. Background technique [0002] Wide bandgap semiconductors generally refer to silicon carbide (SiC), gallium nitride (GaN), etc. with a bandgap width of about 3.0 eV or above. Compared with Si materials, these materials have the advantages of wider band gap, high breakdown electric field, high thermal conductivity, high electron saturation rate, etc., and are the preferred materials for preparing power electronic devices. Among them, the Schottky diode made of SiC material is a majority carrier device. This structure is characterized by no injection and storage of additional carriers, fast switching speed, and low switching loss. It can be widely used in electric vehicles / hybrids Inverters, converters, PFC circuits that require ...

AI Technical Summary

Problems solved by technology

[0005] According to the characteristics of the above different junction terminal structures, the present invention proposes a SiC Schottky diode with a floating metal ring and a field plate combined with a junction terminal extension structure and a manufacturing method thereof. At present, this structure is used in SiC Schottky diode devices. The app has no instances yet

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