Method for evaluating performances of PIN layers of silicon-based thin film cell

Abstract

The invention discloses a method for evaluating performances of PIN layers of a silicon-based thin film cell. The performances of the P, I and N layers of the silicon-based thin film cell are qualitatively judges by testing quantum efficiency values of a cell device under different bias voltage conditions and comparing the quantum efficiency values with quantum efficiency values of a standard cell device. The quantum efficiency test is different from conventional quantum efficiency test, the performances of a unijunction PIN amorphous silicon (or microcrystalline silicon) cell can be effectively, rapidly and accurately evaluated by testing under the different bias voltage conditions, crucial reasons for low performances of the cell device are found, the cell device is improved in a targeted manner, numerous test projects in existing conventional evaluation are decreased, time in industrial production is saved, and the method is an ideal evaluation method in industrial production process.

Description

technical field [0001] The invention relates to the technical field of silicon-based thin-film solar cells, in particular to a method for evaluating the performance of each layer of a silicon-based thin-film cell PIN. Background technique [0002] The photoelectric conversion layer in silicon-based thin-film solar cells is a PIN structure composed of doped amorphous silicon (or microcrystalline silicon) and intrinsic amorphous silicon (or microcrystalline silicon) films, and its total thickness is less than 1 micron. The requirements in the process are extremely strict, and any tiny defects introduced in the process may cause fatal damage to the PIN junction and affect its photoelectric conversion performance. For the performance evaluation of each layer of the PIN junction composed of three-layer thin films, due to the limitation of the thin film thickness, it is difficult to accurately determine the specific reasons for the low performance of the PIN junction. People need ...

AI Technical Summary

Problems solved by technology

[0003] In view of the shortcomings of the existing silicon-based thin-film solar cell PIN performance test methods, which have many test items and take a long time, according to the need to quickly and accurately evaluate battery devices with performance indicators in the continuous production process, and then find out the crux of the problem The specific requirements of the specific requirements, the present invention proposes a method for evaluating the performance of each layer of the silicon-based thin-film battery PIN, the method only needs to test the quantum efficiency (QE) of the battery device, and can accurately judge the P, The performance index of each layer of I and N, to determine the main reasons affecting the performance of the battery device, so that it can be improved according to the specific situation