Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laminated 3D-MCM (3-dimensional multiple chip module) structure based on peripheral vertical interconnect technology

A vertical interconnection and stacking technology, which is applied in the field of microelectronics to achieve the effect of miniaturization, high performance and multi-functionality, and reduction of assembly levels

Active Publication Date: 2013-04-03
XIDIAN UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although domestic research on 3D-MCM has made some achievements in recent years, the practical work of 3D-MCM is still in its infancy, and there is a long way to go compared with the application level and development scale of foreign countries.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminated 3D-MCM (3-dimensional multiple chip module) structure based on peripheral vertical interconnect technology
  • Laminated 3D-MCM (3-dimensional multiple chip module) structure based on peripheral vertical interconnect technology
  • Laminated 3D-MCM (3-dimensional multiple chip module) structure based on peripheral vertical interconnect technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be described in detail below in conjunction with specific embodiments.

[0021] The invention is applied to a signal processing device in a real-time imaging system, and the signal processing device includes 8 digital signal processors DSP and 32 synchronous dynamic random access memory SDRAM. Using the stacked three-dimensional multi-chip module 3D-MCM structure, 8 pieces of DSP and 32 pieces of SDRAM are divided into two 3D-MCMs with the same structure; each 3D-MCM includes 4 pieces of DSP and 16 pieces of SDRAM, divided into The upper multi-chip module MCM and the lower multi-chip module MCM; the upper multi-chip module MCM and the lower multi-chip module MCM respectively include 2 pieces of DSP and 8 pieces of SDRAM.

[0022] refer to figure 1 , The structure of the present invention includes four parts, the first part is the upper multi-chip module MCM, the second part is the peripheral vertical interconnection welding post 1, the third ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a laminated 3D-MCM (3-dimensional multiple chip module) structure based on peripheral vertical interconnect technology. The laminated 3D-MCM structure comprises an upper multiple chip module (MCM), peripheral vertical interconnected welded columns (1), a lower MCM and a packaging shell (2), wherein the upper MCM is formed by an upper chip holding area, upper ball grid arrays and a high-density multilevel interconnected substrate, the lower MCM is formed by a lower chip holding area, lower ball grid arrays, interconnected ball grid arrays and a high-density multilevel interconnected substrate, and the upper MCM and the lower MCM are interconnected via the peripheral vertical interconnected welded columns and share the packaging shell, thus the 3-dimensional multiple chip module (3D-MCM) is formed. The laminated 3D-MCM structure based on the peripheral vertical interconnect technology can meet requirements for miniaturization and high performance and reliability of a complicated electronic circuit system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to microelectronic assembly, in particular to multi-chip components (MCM), vertically interconnected stacked three-dimensional multi-chip components 3D-MCM technology, and is mainly used to realize the miniaturization, high performance and high reliability. Background technique [0002] Microelectronics assembly technology is a key technology to reduce the volume and weight of electronic equipment, speed up computing speed, improve reliability, and reduce assembly levels. The most eye-catching one is multi-chip component MCM, and the development on the basis of multi-chip component MCM Three-dimensional multi-chip module 3D-MCM has attracted more and more attention at home and abroad because of its unique advantages. [0003] Internationally, developed countries led by the United States, France and other countries have strengthened the research on 3D-MCM of three-dimensional...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/528H01L25/00
Inventor 董刚刘全威杨银堂
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products