Titanium-doped tantalum-based barrier layer for copper interconnects and method of making same
A manufacturing method and technology of titanium doping, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as device failure and device performance degradation, and achieve improved performance, narrowed channels, and good barrier properties. Effect
Active Publication Date: 2015-12-16
SEMICON MFG INT (SHANGHAI) CORP
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However, because copper diffuses very quickly in silicon and its oxides and most dielectric materials, and once copper enters the device structure, it will form deep-level impurities, which have a strong trap effect on the carriers in the device. Lead to significant degradation of device performance or even device failure
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[0023] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.
[0024] The invention provides a titanium-doped tantalum-based barrier layer for copper interconnection, comprising a titanium-doped tantalum-nitrogen film and a titanium-doped tantalum film on the titanium-doped tantalum-nitrogen film, wherein the titanium-doped The composition of the tantalum nitrogen film includes titanium, nitrogen and tantalum, wherein the percentage of titanium in the total number of atoms of titanium and tantalum is 0.1% to 2.2%; the composition of the titanium-doped tantalum film includes titanium and tantalum, in which titanium accounts for ...
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The invention relates to a titanium doped tantalum base barrier layer for copper interconnection and a manufacturing method thereof. The titanium doped tantalum base barrier layer comprises a titanium doped tantalum nitrogen film and a titanium doped tantalum film placed on the titanium doped tantalum nitrogen film, wherein the atom number of titanium in the titanium doped tantalum nitrogen film accounts for 0.1%-2.2% of the total atom number of the titanium; and the atom number of the titanium in the titanium doped tantalum film accounts for 0.1%-2.2% of the total atom number. Compared with the prior art, the barrier layer acting as the copper interconnection is changed to the titanium doped tantalum base barrier layer consisting of the titanium doped tantalum film / the titanium doped tantalum nitrogen film from the tantalum base barrier layer consisting of tantalum film / tantalum nitrogen film in the prior art; and the manufacturing method of the titanium doped tantalum base barrier layer comprises the following steps of: changing a target material to be a titanium tantalum solid solution from the titanium during the process of forming the barrier layer, wherein the atom number proportion of the titanium to the titanium and tantalum is 0.1%-2.2%, so that the performances of the barrier layer and a semiconductor device are greatly improved.
Description
technical field [0001] The invention relates to an integrated circuit material and a manufacturing method thereof, in particular to a titanium-doped tantalum-based barrier layer for copper interconnection and a manufacturing method thereof. Background technique [0002] With the development of very large-scale integrated circuits, the integration level is getting higher and higher, and the RC delay and crosstalk between metal interconnections of integrated circuits have become the main factors restricting the further improvement of integrated circuit speed. Using copper / low-K dielectric to replace the traditional aluminum / silicon dioxide gate structure can greatly improve the performance of integrated circuits. However, because copper diffuses very quickly in silicon and its oxides and most dielectric materials, and once copper enters the device structure, it will form deep-level impurities, which have a strong trap effect on the carriers in the device. This will lead to si...
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IPC IPC(8): H01L23/532H01L21/768
Inventor 康晓春何朋
Owner SEMICON MFG INT (SHANGHAI) CORP