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Low impedance gate control method and apparatus

A technology of shared gate and gate driver, applied in electrical components, electronic switches, electric solid devices, etc., can solve the problem of unresolved inductance

Active Publication Date: 2013-04-17
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Inductance on the gate driver board and within the power module or package is often not accounted for

Method used

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  • Low impedance gate control method and apparatus
  • Low impedance gate control method and apparatus
  • Low impedance gate control method and apparatus

Examples

Experimental program
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Embodiment Construction

[0020] Figure 1A and Figure 1B An embodiment of a power transistor system is shown. Figure 1A a hybrid block diagram / circuit schematic showing high-side components and connections, Figure 1B Hybrid block diagram / circuit schematic showing corresponding low-side components and connections. figure 2 An equivalent circuit diagram of the power system of FIG. 1 is shown, implemented as an exemplary half-bridge design. In general, a power transistor system may include any type of half-bridge, H-bridge, full-bridge or any other type of power transistor circuitry and corresponding gate drivers. Figure 3A shows a plan view of the top side of the gate driver module 100, while Figure 3B A plan view of the opposite bottom side of the gate driver module 100 is shown.

[0021] The gate driver module 100 includes a plurality of parallel coupled and has a common gate input 104, a common supply voltage (V DD ) and the high-side gate driver chip 102 that share the output terminal 106 ...

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Abstract

The invention refers to a low impedance gate control method and apparatus. According to one embodiment of a module, the module includes a plurality of gate driver chips coupled in parallel and having a common gate input, a common supply voltage and a common output. The chips are spaced apart from one another and have a combined width extending between an edge of a first outer one of the chips and an opposing edge of a second outer one of the chips. The module further includes a plurality of capacitors coupled in parallel between ground and the common supply voltage, and a transverse electromagnetic (TEM) transmission line medium coupled to the common output of the chips and having a current flow direction perpendicular to the combined width of the chips.

Description

technical field [0001] The present application relates to power transistors, and in particular to power transistors with low gate circuit inductance. Background technique [0002] In power electronic circuits, such as inverters, converters, etc., such as MOSFET (metal-oxide-semiconductor field-effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) and JFETs (Junction Field Effect Transistors) for power semiconductor switches. Commands to control the turn-on, turn-off, blocking, and conduction states of the power semiconductor switches are generated in the controller and sent to the Control terminal. Gate driver Input voltage shift command signal from controller (e.g. via transformer, optocoupler, level shifter, etc.) The signal is shaped. [0003] The power semiconductor devices described above may also be used to manage fault conditions, eg by detecting short circuits to loads. A load short circuit can occur between two phases, between all three phases or betw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
CPCH01L24/49H01L2224/0603H01L2224/48227H01L2224/48472H01L2224/4903H01L2224/49109H01L2224/49111H01L2224/48091H01L2224/49175H01L2924/13091H01L24/46H01L2924/13055H01L2924/3011H01L23/62H01L23/645H01L25/072H01L25/162H01L2924/30107H01L2924/13062H01L2924/1306H01L2924/1305H01L2924/15787H01L2924/00014H01L2924/12042H01L2224/24225H01L24/48H01L2224/45014H01L2224/49052H01L2924/00H01L2224/45099H01L2924/206
Inventor 赖因霍尔德·巴耶尔埃尔丹尼尔·多梅斯
Owner INFINEON TECH AG