A method for realizing Aln single crystal growth through growth mode regulation
A single crystal and pattern technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low growth rate and low commercialization ability of AlN single crystal, so as to improve the growth rate and solve the low commercialization ability. Effect
Active Publication Date: 2015-09-02
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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Problems solved by technology
The second difficulty is that the growth rate is too low, generally only 5-15 μm / h, which is far lower than the growth rate of SiC single crystal and sapphire single crystal, so that the commercialization ability of AlN single crystal is low
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[0019] Example: refer to figure 1 and figure 2 , a method for realizing AlN single crystal growth through growth mode regulation is carried out according to the following steps:
[0020] Step 100 (A), furnace loading, vacuuming, nitrogen filling, heating up: fix AlN seed crystal 1 (or SiC seed crystal) on crucible cover 2, crucible cover 2, crucible 3, insulation sleeve 4, high-purity AlN Powder 5 (purity 99.99%) was assembled. refer to figure 2 , first put the high-purity AlN powder 5 into the crucible 3, cover the crucible cover 2, and then put it into the insulation cover 4. The upper and lower sides of the insulation cover 4 reserve infrared pyrometer viewing holes, and then put them into the induction heating single crystal growth furnace together. middle. Firstly, vacuumize, the vacuumizing process is: firstly vacuumize with a mechanical pump, and then vacuumize with a molecular pump until the pressure in the furnace drops to 1×10 -4 below mbar. Then fill the fur...
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Abstract
The invention relates to a growth method of monocrystals, and particularly relates to a method for realizing growth of AlN monocrystals by growth mode regulation. The method is carried out by the following steps of: (A) charging a furnace, degassing, filling nitrogen and heating; (B) performing three-dimensional growth; (C) performing two-dimensional growth; (D) repeating step (B) and step (C); (E) cooling, filling the nitrogen and discharging from the furnace. According to the method, a combination of a three-dimensional island-shaped growth mode and a two-dimensional flat growth mode of the AlN crystals is realized by using a temperature-changed pressure-changed growth mode regulation technology, which not only utilizes the three-dimensional island-shaped mode to increase the growth rate, but also utilizes the two-dimensional flat mode to keep the flatness and continuity of the growth surface; and the method is beneficial to growing high-quality AlN monocrystal materials and is helpful to solve low productization capability of the AlN monocrystals.
Description
technical field [0001] The invention relates to a method for growing a single crystal, in particular to a method for realizing growth of an AlN single crystal by using a physical gas phase transport method through growth mode control. Background technique [0002] Aluminum nitride (AlN) is a direct band gap semiconductor material with a wide band gap (6.2eV) and a high breakdown field strength (1.17×10 7 V / cm), high volume resistivity (>1x10 11 Ω·cm), high electron mobility (1100cm 2 / (V s)), high thermal conductivity (3.4W / (cm K)), and the highest BHFM, KFM and JFM figure of merit index among all semiconductor materials, and also has good thermal stability, corrosion resistance and resistance Radiation and other excellent physical and chemical properties. Aluminum nitride has the smallest lattice constant among all group III nitride crystals, and all InAlGaN components grown on AlN are in a state of compressive stress. The thermal expansion coefficients of AlN and Ga...
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IPC IPC(8): C30B23/00C30B29/38
Inventor 齐海涛
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST